Monolithically integrated optical devices with amorphous silicon arrayed waveguidi gratings and INGaAsP gain

Abstract

An optical waveguide assembly and method of forming the same is described. The optical waveguide assembly includes a waveguide, an amorphous silicon arrayed waveguide grating communicative with the waveguide, and an integrated amorphous silicon waveguide grating laser which communicatively outputs a laser output responsive to the amorphous silicon arrayed waveguide grating. The method includes providing a waveguide, providing an amorphous silicon arrayed waveguide grating communicative with the waveguide, and providing an integrated amorphous silicon waveguide grating laser which communicatively outputs a laser output responsive to the amorphous silicon arrayed waveguide grating.

1 . An optical waveguide assembly comprising:
 a plurality of waveguides;   an amorphous silicon arrayed waveguide grating communicative with said waveguides; and,   an integrated III-V semiconductor device which communicatively outputs a laser output in cooperation with said amorphous silicon arrayed waveguide grating;   wherein, the amorphous silicon waveguide grating and III-V semiconductor device are coupled such that the amorphous silicon waveguide grating at least spectrally filters and beam splits a laser output from a lasing cavity.   
   
   
       2 . The assembly of  claim 1 , wherein said waveguide comprises an at least one a-SiN x :H layer and a single mode rib. 
   
   
       3 . The assembly of  claim 2 , wherein said single mode rib is 2 μm wide. 
   
   
       4 . The assembly of  claim 2 , wherein said single mode rib is dry etched using reactive ion etching. 
   
   
       5 . The assembly of  claim 2 , wherein said at least one a-SiN x :H layer is deposited by plasma enhanced chemical vapor deposition. 
   
   
       6 . The assembly of  claim 1 , wherein said waveguide is a buried waveguide. 
   
   
       7 . The assembly of  claim 1 , wherein said waveguide comprises a bending radius, wherein said bending radius is between about 600 μm and about 1000 μm. 
   
   
       8 . An optical waveguide assembly comprising:
 a waveguide;   an amorphous silicon arrayed waveguide grating communicative with said waveguide;   an integrated amorphous silicon waveguide grating laser which communicatively outputs a laser output responsive to said amorphous silicon arrayed waveguide grating; and   a beam splitter distinct from the amorphous silicon waveguide grating.   
   
   
       9 . The assembly of  claim 1 , further comprising an InGaAsP gain section to which the laser output is responsive. 
   
   
       10 . A method of forming an optical waveguide assembly, said method comprising:
 providing a plurality of waveguides;   an amorphous silicon arrayed waveguide grating communicative with said waveguides;   providing an integrated III-V semiconductor device which communicatively outputs a laser output in cooperation with said amorphous silicon arrayed waveguide grating; and   spectrally filtering and beam splitting a laser output from a lasing cavity using the amorphous silicon waveguide grating.   
   
   
       11 . The method of  claim 10 , wherein said method comprises providing an at least one a-SiN x :H layer and providing a single mode rib. 
   
   
       12 . The method of  claim 11 , wherein said single mode rib is 2 μm wide. 
   
   
       13 . The method of  claim 11 , wherein said single mode rib is dry etched using reactive ion etching. 
   
   
       14 . The method of  claim 11 , wherein said at least one a-SiN x :H layer is deposited by plasma enhanced chemical vapor deposition. 
   
   
       15 . The method of  claim 10 , wherein said waveguide is a buried waveguide. 
   
   
       16 . The method of  claim 10 , wherein said waveguide comprises a bending radius, wherein said bending radius is between about 600 μm and about 1000 μm. 
   
   
       17 . The method of  claim 10 , wherein said providing said amorphous silicon arrayed waveguide grating further comprises providing a splitter. 
   
   
       18 . The method of  claim 10 , further comprising providing an InGaAsP gain section to which the laser output is responsive.