Structures and methods to enhance copper metallization

Abstract

Disclosed structures and methods inhibit atomic migration and related capacitive-resistive effects between a metallization layer and an insulator layer in a semiconductor structure. One exemplary structure includes an inhibiting layer between an insulator and a metallization layer. The insulator includes a polymer or an insulating oxide compound. And, the inhibiting layer has a compound formed from a reaction between the polymer or insulating oxide compound and a transition metal, a representative metal, or a metalloid.

1 . A semiconductor structure comprising:
 an insulator layer having a first substance, the first substance comprising a material selected from a group consisting of a polymer and a foamed polymer;   an inhibiting layer on the insulator layer, wherein the inhibiting layer includes a second substance, the second substance selected from a group consisting of a transition metal and a representative metal, the inhibiting layer including a compound formed by the first substance and the second substance so as to inhibit undesired atomic migration; and   a copper metallization layer on the inhibiting layer.   
   
   
       2 . The semiconductor structure of  claim 1 , wherein the inhibiting layer includes a transition metal that includes zirconium. 
   
   
       3 . The semiconductor structure of  claim 1 , wherein the inhibiting layer includes a layer of zirconium with a thickness of about 5 Angstroms to about 40 Angstroms. 
   
   
       4 . The semiconductor structure of  claim 1 , wherein the inhibiting layer includes a layer of zirconium with a thickness of about 10 Angstroms to about 30 Angstroms. 
   
   
       5 . The semiconductor structure of  claim 1 , wherein the inhibiting layer includes a layer of zirconium with a thickness of about 20 Angstroms. 
   
   
       6 . The semiconductor structure of  claim 1 , wherein the inhibiting layer includes a representative metal that includes aluminum. 
   
   
       7 . The semiconductor structure of  claim 1 , wherein the inhibiting layer includes a layer of aluminum with a thickness of about 5 Angstroms to about 40 Angstroms. 
   
   
       8 . The semiconductor structure of  claim 1 , wherein the inhibiting layer includes a layer of aluminum with a thickness of about 20 Angstroms to about 30 Angstroms. 
   
   
       9 . The semiconductor structure of  claim 1 , wherein the inhibiting layer includes a layer of aluminum with a thickness of about 20 Angstroms. 
   
   
       10 . A semiconductor structure comprising:
 an insulator layer having a first substance, the first substance comprising a material selected from a group consisting of a polymer, a foamed polymer, a fluorinated polymer, a fluorinated-foamed polymer, and an insulator oxide compound;   an inhibiting layer on the insulator layer, the inhibiting layer including a second substance, the second substance selected from a group consisting of a transition metal, a representative metal, and a metalloid, the inhibiting layer including a compound formed from a reaction between the first substance and the second substance so as to inhibit undesired atomic migration; and   a copper metallization layer on the inhibiting layer.   
   
   
       11 . The semiconductor structure of  claim 10 , wherein the inhibiting layer includes the compound formed by a reaction between the second substance with the first substance to form an in situ barrier. 
   
   
       12 . The semiconductor structure of  claim 10 , wherein the inhibiting layer includes a layer of zirconium with a thickness of about 5 Angstroms to about 40 Angstroms. 
   
   
       13 . The semiconductor structure of  claim 10 , wherein the inhibiting layer includes a layer of zirconium with a thickness of about 10 Angstroms to about 30 Angstroms. 
   
   
       14 . The semiconductor structure of  claim 10 , wherein the inhibiting layer includes a layer of zirconium with a thickness of about 20 Angstroms. 
   
   
       15 . The semiconductor structure of  claim 10 , wherein the inhibiting layer includes a representative metal that includes aluminum. 
   
   
       16 . The semiconductor structure of  claim 10 , wherein the inhibiting layer includes a layer of aluminum with a thickness of about 5 Angstroms to about 40 Angstroms. 
   
   
       17 . The semiconductor structure of  claim 10 , wherein the inhibiting layer includes a layer of aluminum with a thickness of about 20 Angstroms to about 30 Angstroms. 
   
   
       18 . The semiconductor structure of  claim 10 , wherein the inhibiting layer includes a layer of aluminum with a thickness of about 20 Angstroms. 
   
   
       19 . A semiconductor structure comprising:
 an insulator layer having a first substance, the first substance comprising a material selected from a group consisting of a foamed polymer and a fluorinated polymer;   an inhibiting layer on the insulator layer, the inhibiting layer including a second substance, the second substance selected from a group consisting of a representative metal and a metalloid, the inhibiting layer including a compound formed from a reaction between the first substance and the second substance so as to inhibit undesired atomic migration; and   a copper metallization layer on the inhibiting layer.   
   
   
       20 . The semiconductor structure of  claim 19 , wherein the material includes a fluorinated-foamed polymer. 
   
   
       21 . The semiconductor structure of  claim 20 , wherein the fluorinated-foamed polymer includes fluorinated-foamed polyimide. 
   
   
       22 . The semiconductor structure of  claim 19 , wherein the inhibiting layer includes a layer of aluminum with a thickness of about 5 Angstroms to about 40 Angstroms. 
   
   
       23 . The semiconductor structure of  claim 19 , wherein the metalloid includes boron. 
   
   
       24 . The semiconductor structure of  claim 19 , wherein the representative metal includes magnesium.