Method to prevent slurry caking on cmp conditioner

Abstract

A method of planarizing a semiconductor structure comprises moving a conditioning element on a surface of a polishing member, rotating the semiconductor structure relative to the polishing member against the surface of the polishing member, and rinsing the surface of the polishing member and the semiconductor structure. While the conditioning element is moved over the surface of the polishing member and the semiconductor structure is rotated against the surface of the polishing member, slurry is directed onto the polishing member. The step of rinsing comprises contacting the conditioning element to the surface of the polishing member.

1 . A method of planarizing a semiconductor structure, the method comprising:
 moving a conditioning element on a surface of a polishing pad relative to the surface;   rotating the semiconductor structure relative to the polishing pad against the surface of the polishing pad;   directing slurry onto the polishing pad during the steps of moving and rotating; and   rinsing the surface of the polishing pad and the semiconductor structure, wherein the step of rinsing comprises contacting the conditioning element to the surface of the polishing pad.   
     
     
         2 . The method according to  claim 1 , wherein the step of moving comprises rotating the conditioning element relative to the polishing pad. 
     
     
         3 . The method according to  claim 1 , wherein the step of rotating comprises rotating both the semiconductor structure and the polishing pad. 
     
     
         4 . The method according to  claim 1 , wherein the step of contacting further comprises oscillating the conditioning element against the surface of the polishing pad. 
     
     
         5 . The method according to  claim 1 , wherein the step of contacting further comprises rotating the conditioning element relative to the polishing pad. 
     
     
         6 . The method according to  claim 1 , wherein the semiconductor structure is a wafer. 
     
     
         7 . The method according to  claim 1 , wherein the semiconductor structure is a wafer; the step of moving comprises rotating the conditioning element relative to the polishing pad; the step of rotating comprises rotating both the semiconductor structure and the polishing pad; and the step of contacting further comprises oscillating the conditioning element against the surface of the polishing pad and rotating the conditioning element relative to the polishing pad. 
     
     
         8 . A method of planarizing a semiconductor wafer using chemical mechanical polishing (CMP), comprising:
 pressing a surface of the wafer against an abrasive surface of a rotating polishing pad and rotating the wafer relative to the polishing pad to planarize the wafer surface;   conditioning the polishing pad by rotating a conditioning surface of a conditioning disk against and relative to the polishing pad abrasive surface to remove material from the polishing pad abrasive surface; the conditioning disk being supported on a support arm that moves the conditioning disk from an edge to a center of the polishing pad as the polishing pad rotates, to move the disk in an oscillating manner relative to the polishing pad abrasive surface;   directing a slurry containing a corrosive solution from a slurry arm onto the abrasive surface of the rotating polishing pad, the slurry flowing from the slurry arm in the direction of rotation of the polishing pad to the conditioning surface and wafer surface;   turning the slurry off and directing water onto the abrasive surface of the polishing pad for rinsing to remove slurry and polishing particles from and to cool the polishing pad abrasive surface, conditioning surface and wafer surface;   while the polishing pad abrasive surface is being rinsed, reducing the pressure of pressing the surface of the wafer against the polishing pad abrasive surface, and holding the conditioning surface in contact with the polishing pad abrasive surface to prevent drying of the conditioning surface; and   after rinsing and cooling the conditioning surface, removing the conditioning disk away from the polishing pad with the support arm.   
     
     
         9 . Apparatus for planarizing a semiconductor structure, the apparatus comprising:
 a polishing member having a surface for polishing the semiconductor structure;   a conditioning element;   a support arm supporting the conditioning element for movement across the surface of the polishing member for conditioning the surface of the polishing member; and   a slurry arm for directing slurry onto the surface of the polishing member during polishing and for directing water onto the surface of the polishing member for rinsing;   the support arm serving to hold the conditioning element in contact with the surface of the polishing member when thewater is rinsing the surface of the polishing member.   
     
     
         10 . The apparatus according to  claim 9 , wherein the polishing member and the semiconductor structure are rotatable relative to each other. 
     
     
         11 . The apparatus according to  claim 9 , wherein the conditioning element is disk-shaped. 
     
     
         12 . The apparatus according to  claim 9 , wherein a surface of the conditioning element in contact with the surface of the polishing member comprises abrasive particles. 
     
     
         13 . The apparatus according to  claim 9 , wherein the polishing member and the semiconductor structure are rotatable relative to each other; the conditioning element is disk-shaped; and a surface of the conditioning element in contact with the surface of the polishing member comprises abrasive particles.