US2009258481A1PendingUtilityA1

Semiconductor device manufacturing apparatus and semiconductor device manufacturing method

Assignee: UENO KAZUYOSHIPriority: Mar 24, 1998Filed: Mar 27, 2009Published: Oct 15, 2009
Est. expiryMar 24, 2018(expired)· nominal 20-yr term from priority
Inventors:Kazuyoshi Ueno
H10P 72/7606H10P 72/0432H10W 20/056H10P 14/43C23C 16/44C23C 16/4585C23C 16/18C23C 16/52
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Claims

Abstract

A semiconductor device manufacturing apparatus which uses a thermal CVD reaction to deposit a film onto a substrate has a ring with an electrode terminal that makes contact with either the substrate or the deposited film thereon, a power supply that applies a current or a potential to this electrode terminal of the ring, and a piston cylinder mechanism for moving the ring up and down, so as to cause its electrode terminal to make and break contact with the substrate or deposited film thereon.

Claims

exact text as granted — not AI-modified
1 - 28 . (canceled) 
   
   
       29 . A semiconductor device manufacturing method for depositing a film on a substrate by a thermal CVD reaction, wherein a d.c. electrical potential is applied across said substrate or film deposited thereupon without making contact with said substrate or film deposited thereupon. 
   
   
       30 . A semiconductor device manufacturing method according to  claim 29 , wherein magnetic flux is applied to said substrate or film deposited thereupon. 
   
   
       31 - 32 . (canceled)

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