Light emitting element, a light emitting device, a method of manufacturing a light emitting element and a method of manufacturing a light emitting device

Abstract

The present invention provides a light-emitting element, a method of manufacturing the light-emitting element, a light-emitting device, and a method of manufacturing the light-emitting device. A method of manufacturing a light-emitting element includes: forming a first conductive layer of a first conductive type, a light-emitting layer, and a second conductive layer of a second conductive type on at least one first substrate, forming an ohmic layer on the second conductive layer and bonding the at least one first substrate to a second substrate. The second substrate being larger than the first substrate. The method further includes etching portions of the ohmic layer, the second conductive layer, and the light-emitting layer to expose a portion of the first conductive layer.

1 . A method of manufacturing a light-emitting element, the method comprising:
 forming a first conductive layer of a first conductive type, a light-emitting layer, and a second conductive layer of a second conductive type on at least one first substrate;   forming an ohmic layer on the second conductive layer;   bonding the at least one first substrate to a second substrate, the second substrate being larger than the first substrate; and   etching portions of the ohmic layer, the second conductive layer, and the light-emitting layer to expose a portion of the first conductive layer.   
   
   
       2 . The method of  claim 1 , further comprising:
 before the ohmic layer is formed, performing a first annealing on the first substrate having the first conductive layer, the light-emitting layer, and the second conductive layer formed thereon.   
   
   
       3 . The method of  claim 2 , further comprising:
 forming a first electrode on the exposed first conductive layer, forming a second electrode on the ohmic layer; and   performing an annealing on the first and second substrates bonded to each other after the first and second electrodes are formed,   wherein the process temperature of the annealing performed on the first and second substrate bonded to each other is lower than that of the first annealing.   
   
   
       4 . The method of  claim 2 , further comprising:
 before the bonding of the first and second substrates to each other, performing second annealing on the first substrate having the ohmic layer formed thereon.   
   
   
       5 . The method of  claim 4 , further comprising:
 forming a first electrode on the exposed first conductive layer, forming a second electrode on the ohmic layer; and   performing a third annealing on the first and second substrates bonded to each other after the first and second electrodes are formed,   wherein the process temperature of the third annealing is lower than that of the second annealing.   
   
   
       6 . The method of  claim 1 , further comprising:
 forming a first electrode on the exposed first conductive layer, forming a second electrode on the ohmic layer;   removing the second substrate after the first and second electrodes are formed, reducing the thickness of the first substrate; and   dividing the first substrate into chips.   
   
   
       7 . The method of  claim 1 , wherein the bonding of the at least one first substrate to the second substrate is performed by at least one of direct bonding and adhesive bonding. 
   
   
       8 . The method of  claim 7 , wherein:
 the direct bonding includes:   pre-treating a bonding surface of the second substrate or a bonding surface of the at least one first substrate; and   performing a heat treatment on the second substrate and the at least one first substrate, or physically compressing the second substrate and the at least one first substrate.   
   
   
       9 . The method of  claim 8 , wherein the pre-treatment includes a plasma treatment or a wet treatment. 
   
   
       10 . The method of  claim 8 , further comprising:
 before the pre-treatment, polishing at least one of the bonding surface of the first substrate and the bonding surface of the second substrate.   
   
   
       11 . The method of  claim 8 , further comprising:
 before the pre-treatment, cleaning the first substrate and the second substrate.   
   
   
       12 . The method of  claim 7 , wherein:
 the adhesive bonding includes:   interposing an intermediate material layer between the bonding surface of the second substrate and the bonding surface of the at least one first substrate; and   performing a heat treatment on the second substrate and the at least one first substrate, or physically compressing the second substrate and the at least one first substrate.   
   
   
       13 . The method of  claim 1 , wherein the first substrate is an insulating substrate, and the second substrate is a conductive substrate. 
   
   
       14 . The method of  claim 1 , wherein the first conductive layer, the light-emitting layer, and the second conductive layer each include In x Al y Ga (1-x-y) N (0≦x≦1, and 0≦y≦1). 
   
   
       15 . The method of  claim 1 , wherein the first conductive type is an n type, and the second conductive type is a p type. 
   
   
       16 . A method of manufacturing a light-emitting element, the method comprising:
 performing a first annealing on at least one insulating substrate at a first temperature;   bonding the at least one insulating substrate to a conductive substrate, the conductive substrate being larger than the insulating substrate; and   performing a second annealing on the insulating substrate and the conductive substrate bonded to each other at a second temperature that is lower than the first temperature.   
   
   
       17 . The method of  claim 16 , further comprising:
 before the first annealing, sequentially forming a first conductive layer of a first conductive type, a light-emitting layer, and a second conductive layer of a second conductive type on the insulating substrate.   
   
   
       18 . The method of  claim 17 , further comprising:
 before the first annealing, forming an ohmic layer on the second conductive layer.   
   
   
       19 . The method of  claim 18 , further comprising:
 after the bonding of the at least one insulating substrate to a conductive substrate and prior to the second annealing,   sequentially etching portions of the ohmic layer, the second conductive layer, and the light-emitting layer to expose a portion of the first conductive layer;   forming a first electrode on the exposed first conductive layer; and   forming a second electrode on the ohmic layer.   
   
   
       20 . The method of  claim 16 , wherein the bonding of the at least one insulating substrate to the conductive substrate is performed by at least one of direct bonding and adhesive bonding. 
   
   
       21 . A method of manufacturing a light-emitting element, the method comprising:
 forming a first GaN layer of an n type, a light-emitting layer, a second GaN layer of a p type on at least one sapphire substrate;   performing a first annealing on the at least one sapphire substrate;   forming an ohmic layer on the second GaN layer;   performing a second annealing on the at least one sapphire substrate;   bonding the at least one sapphire substrate to a silicon substrate, the silicon substrate being larger than the sapphire substrate;   etching portions of the ohmic layer, the second GaN layer, and the light-emitting layer to expose a portion of the first GaN layer;   forming a first electrode on the exposed first GaN layer; and   forming a second electrode on the ohmic layer.   
   
   
       22 . The method of  claim 21 , further comprising:
 before or after the first and second electrodes are formed, performing a third annealing on the sapphire substrate and the silicon substrate bonded to each other,   wherein the process temperature of the third annealing is lower than that of the first annealing or the second annealing.   
   
   
       23 . A method of manufacturing a light-emitting device using the method of manufacturing a light-emitting element according to  claim 1 . 
   
   
       24 - 27 . (canceled)