Aa stacked graphene-diamond hybrid material by high temperature treatment of diamond and the fabrication method thereof

Abstract

There is provided a fabrication method for an AA stacked graphene-diamond hybrid material by converting, through a high temperature treatment on diamond, a diamond surface into graphene. According to the present invention, if various types of diamond are maintained at a certain temperature having a stable graphene phase (approximately greater than 1200° C.) in a hydrogen gas atmosphere, two diamond {111} lattice planes are converted into one graphene plate (2:1 conversion), whereby the diamond surface is converted into graphene in a certain thickness, thus to fabricate the AA stacked graphene-diamond hybrid material.

1 . An AA stacked graphene-diamond hybrid material, comprising:
 a diamond matrix; and   AA stacked graphene configured to be converted in a certain thickness from a {111} lattice plane cut by a surface of the diamond matrix due to an alternative loss of the {111} lattice planes.   
     
     
         2 . The AA stacked graphene-diamond hybrid material of  claim 1 , wherein a hydrogen atom is coupled onto the cut diamond {111} lattice on which the graphene and diamond are not coupled, on an interface (hereinafter, referred to as ‘graphene/diamond interface’) between the AA stacked graphene and the converted diamond matrix. 
     
     
         3 . The AA stacked graphene-diamond hybrid material of  claim 1 , wherein an interplanar spacing on the AA stacked graphene surface is smaller than that on the graphene/diamond interface. 
     
     
         4 . The AA stacked graphene-diamond hybrid material of  claim 1 , wherein the diamond matrix is formed in the shape of powder, a film or a plate. 
     
     
         5 . The AA stacked graphene-diamond hybrid material of  claim 1 , wherein the diamond matrix is a single crystal or polycrystalline diamond. 
     
     
         6 . A fabrication method for an AA stacked graphene-diamond hybrid material, wherein a diamond matrix is maintained within a temperature range having a stable graphene phase in a hydrogen gas atmosphere such that a surface of the diamond matrix in a certain thickness is converted into AA stacked graphene due to an alternative loss of {111} lattice planes cut by the surface of the diamond matrix. 
     
     
         7 . The fabrication method of  claim 6 , wherein the conversion is progressed from the surface of the diamond matrix to an inside thereof. 
     
     
         8 . The fabrication method of  claim 6 , wherein heat, plasma or a laser is used such that the diamond matrix is maintained within a temperature range in which a graphene phase is stable. 
     
     
         9 . The fabrication method of  claim 8 , wherein for the heat treatment, a surface temperature of the diamond matrix is 1,300˜1,800° C. 
     
     
         10 . The fabrication method of  claim 8 , wherein for the plasma treatment, a surface temperature of the diamond matrix is 1,200˜1,600° C. 
     
     
         11 . The fabrication method of  claim 8 , wherein for the laser treatment, a surface temperature of the diamond matrix is room temperature, and a temperature of an area contacting a laser beam is greater than 2,000° C. depending on laser power.