Monolithic nanoscale actuation

Abstract

An apparatus including an actuator configured for controllable deflection, and also including a piezoresistive element integral to the actuator and having first and second piezoresistive portions and a plurality of contacts. One of the plurality of contacts is configured to pass a received feedback signal through the first and second piezoresistive portions. Detection of the actuator deflection is indicated by comparison of the feedback signal as detected via at least one of the plurality of contacts that are interposed by at least one of the first and second piezoresistive portions.

1 - 16 . (canceled) 
   
   
       17 . A method, comprising:
 establishing a sub-atmospheric environment within an electron microscope chamber; and   processing an end effector of a positioner installed within the chamber by operating the positioner to transition the end effector towards an end effector processor installed within the chamber, wherein the positioner includes a plurality of actuators mechanically coupled together and each individually configured to position the end effector with sub-micron precision in each of a corresponding one of a plurality of degrees-of-freedom.   
   
   
       18 . The method of  claim 17  wherein the end effector is monolithic relative to at least one of a plurality of layers from which the actuators are formed. 
   
   
       19 . A method of manufacturing an apparatus having at least one feature dimension that is less than about 1000 microns, the method comprising:
 forming a patterned piezoresistive layer over a substrate including a piezoresistive feedback portion of an actuator and a plurality of piezoresistive gate elements each corresponding to one of a plurality of transistor devices;   forming a temperature-dependent deflector portion of the actuator by forming a first portion of pluralities of dielectric and conductive layers over the piezoresistive feedback portion of the actuator; and   forming a plurality of conductive members interconnecting the plurality of transistor devices by forming second portions of the dielectric and conductive layers over the plurality of transistor devices.   
   
   
       20 . The method of  claim 19  wherein the piezoresistive feedback portion includes first and second piezoresistive portions, the method further comprising forming a plurality of contacts, wherein one of the plurality of contacts is configured to pass a received feedback signal through the first and second piezoresistive portions, and wherein detection of the actuator deflection is indicated by comparison of the feedback signal as detected via at least one of the plurality of contacts that are interposed by at least one of the first and second piezoresistive portions.