Method of fabricating an integrated circuit

Abstract

A method of fabricating an integrated circuit comprising providing a substrate, forming a first layer on the substrate by electrochemical deposition using an electrolyte solution, and converting at least a portion of the first layer into a second layer by electrochemical oxidation using an electrolyte solution, the second layer being an oxide layer.

1 . A method of fabricating an integrated circuit, comprising:
 providing a substrate;   forming a first layer on the substrate by electrochemical deposition using a first electrolyte solution; and   converting at least a portion of the first layer into a second layer by electrochemical oxidation using a second electrolyte solution, the second layer being an oxide layer.   
     
     
         2 . The method according to  claim 1 , further comprising:
 converting a portion of the second layer into a third layer by electrochemical reduction using a third electrolyte solution, the third layer comprising the same material as the first layer.   
     
     
         3 . The method according to  claim 1 , further comprising:
 forming a third layer on the second layer by electrochemical deposition using a third electrolyte solution.   
     
     
         4 . The method according to  claim 1 , wherein providing the substrate comprises forming a fourth layer on the substrate by electrochemical deposition using a fourth electrolyte solution, and wherein the first layer is formed on the fourth layer on the substrate. 
     
     
         5 . The method according to  claim 1 , wherein at least one of forming the first layer and converting at least a portion of the first layer is carried out using an external current source coupled to the substrate and a counter-electrode. 
     
     
         6 . The method according to  claim 1 , wherein at least one of forming the first layer and converting at least a portion of the first layer is carried out in an electroless manner. 
     
     
         7 . The method according to  claim 1 , wherein forming the first layer and converting at least a portion of the first layer is carried out using the same electrolyte solution. 
     
     
         8 . The method according to  claim 1 , wherein the first electrolyte solution is an aqueous electrolyte solution. 
     
     
         9 . The method according to  claim 1 , wherein the first electrolyte solution is an organic electrolyte solution. 
     
     
         10 . The method according to  claim 1 , wherein the first electrolyte solution is an ionic liquid. 
     
     
         11 . The method according to  claim 1 , wherein the second electrolyte solution is an aqueous electrolyte solution. 
     
     
         12 . The method according to  claim 1 , wherein the second electrolyte solution is an organic electrolyte solution. 
     
     
         13 . The method according to  claim 1 , wherein the second electrolyte solution is an ionic liquid. 
     
     
         14 . The method according to  claim 1 , wherein the first layer is a metal layer. 
     
     
         15 . The method according to  claim 1 , wherein the first layer is a semiconductor layer. 
     
     
         16 . The method according to  claim 1 , wherein the first layer comprises any one of the following materials: Cu, Ag, Au, Pd, Pt, Ru, Ni, Cr, Fe, Ti, Ta, Al, Si, Ge, Hf. Zr. 
     
     
         17 . The method according to  claim 1 , wherein the substrate comprises at least one recess, and wherein the first layer is formed on the substrate in the at least one recess. 
     
     
         18 . The method according to  claim 17 , wherein the recess comprises an aspect ratio of depth to width that is greater than 2. 
     
     
         19 . A method of fabricating an integrated circuit comprising:
 providing a substrate;   forming a first layer on the substrate by electrochemical deposition using a first electrolyte solution;   converting a portion of the first layer by electrochemical oxidation using a second electrolyte solution to provide a second layer, the second layer being an oxide layer formed on the first layer; and   forming a third layer on the second layer, the third layer being separated from the first layer by the second layer.   
     
     
         20 . The method according to  claim 19 , wherein forming the third layer comprises converting a portion of the second layer by electrochemical reduction using a third electrolyte solution, the third layer comprising the same material as the first layer. 
     
     
         21 . The method according to  claim 20 , wherein forming the first layer, converting a portion of the first layer and converting a portion of the second layer is carried out using the same electrolyte solution. 
     
     
         22 . The method according to  claim 19 , wherein the third layer is formed on the second layer by electrochemical deposition using a third electrolyte solution. 
     
     
         23 . A method of fabricating an integrated circuit comprising:
 providing a substrate;   forming a first layer on the substrate by electrochemical deposition using a first electrolyte solution;   forming a second layer on the first layer by electrochemical deposition using a second electrolyte solution; and   converting the second layer into an oxide layer by electrochemical oxidation using a third electrolyte solution.   
     
     
         24 . The method according to  claim 23  further comprising:
 forming a third layer on the second layer by electrochemical deposition using a fourth electrolyte solution.   
     
     
         25 . The method according to  claim 23  further comprising:
 forming a third layer on the second layer by converting a portion of the second layer by electrochemical reduction using a fourth electrolyte solution.