Imaging apparatus and radiation imaging system

Abstract

An imaging apparatus includes a plurality of pixels disposed on an insulation substrate. Each of the pixels includes a plurality of thin-film transistors, a conversion element disposed above the TFTs, and a plurality of insulating layers disposed between the conversion element and the plurality of TFTs. The plurality of TFTs includes a reading TFT having a gate electrode electrically connected to the conversion element and a first selecting TFT electrically connected to a source electrode or a drain electrode of the reading TFT. At least one of a signal wiring, to which a signal corresponding to an electric charge obtained by conversion of incident light or radiation performed by the conversion element is transferred, and a gate wiring that supplies a driving signal to a gate electrode of the first selecting thin-film transistor, is disposed between the plurality of insulating layers.

1 . An imaging apparatus comprising:
 an insulation substrate; and   a plurality of pixels disposed on the insulation substrate, wherein each of the plurality of pixels includes a plurality of thin-film transistors, a conversion element disposed above the plurality of thin-film transistors, and a plurality of insulating layers disposed between the conversion element and the plurality of thin-film transistors,   wherein the plurality of thin-film transistors comprises a reading thin-film transistor having a gate electrode electrically connected to the conversion element and a first selecting thin-film transistor electrically connected to a source electrode or a drain electrode of the reading thin-film transistor, and   wherein at least one of a signal wiring, to which a signal corresponding to an electric charge obtained by conversion of incident light or radiation performed by the conversion element is transferred, and a gate wiring that supplies a driving signal to a gate electrode of the first selecting thin-film transistor, is disposed between the plurality of insulating layers.   
   
   
       2 . The imaging apparatus according to  claim 1 , wherein each of the plurality of insulating layers has a thickness larger than a thickness of a gate insulating layer of each of the plurality of thin-film transistors. 
   
   
       3 . The imaging apparatus according to  claim 1 , wherein the thickness of each of the plurality of insulating layers is between 1 μm and 10 μm, inclusive. 
   
   
       4 . The imaging apparatus according to  claim 1 , wherein each of the pixels further includes a resetting thin-film transistor connected to the conversion element and configured to supply a reset potential. 
   
   
       5 . The imaging apparatus according to  claim 1 , wherein each of the pixels further includes a transferring thin-film transistor electrically connected between the conversion element and the signal wiring and configured to transfer electric charge obtained by conversion performed by the conversion element. 
   
   
       6 . (canceled) 
   
   
       7 . A radiation imaging system comprising:
 an imaging apparatus comprised of an insulation substrate, and a plurality of pixels disposed on the insulation substrate, wherein each of the plurality of pixels includes a plurality of thin-film transistors, a conversion element disposed above the plurality of thin-film transistors, and a plurality of insulating layers disposed between the conversion element and the plurality of thin-film transistors,   wherein the plurality of thin-film transistors comprises a reading thin-film transistor having a gate electrode electrically connected to the conversion element and a first selecting thin-film transistor electrically connected to a source electrode or a drain electrode of the reading thin-film transistor, and   wherein at least one of a signal wiring, to which a signal corresponding to an electric charge obtained by conversion of incident light or radiation performed by the conversion element is transferred, and a gate wiring that supplies a driving signal to a gate electrode of the first selecting thin-film transistor, is disposed between the plurality of insulating layers;   a signal processing unit configured to process a signal from the imaging apparatus;   a recording unit configured to record a signal from the signal processing unit;   a display unit configured to display a signal from the signal processing unit;   a transmission processing unit configured to transmit a signal supplied from the signal processing unit; and   a radiation source configured to generate the radiation.   
   
   
       8 . The radiation imaging system according to  claim 7 , wherein each of the plurality of insulating layers has a thickness larger than a thickness of a gate insulating layer of each of the plurality of thin-film transistors. 
   
   
       9 . The radiation imaging system according to  claim 7 , wherein the thickness of each of the plurality of insulating layers is between 1 μm and 10 μm, inclusive. 
   
   
       10 . The radiation imaging system according to  claim 7 , wherein each of the pixels further includes a resetting thin-film transistor connected to the conversion element and configured to supply a reset potential. 
   
   
       11 . The radiation imaging system according to  claim 7 , wherein each of the pixels further includes a transferring thin-film transistor electrically connected between the conversion element and the signal wiring and configured to transfer electric charge obtained by conversion performed by the conversion element. 
   
   
       12 . (canceled) 
   
   
       13 . An imaging apparatus according to  claim 1 , wherein at least one of the signal wiring and the gate wiring disposed between the plurality of insulating layers is disposed within a region in which the conversion element is disposed when the imaging apparatus is viewed from a light or radiation incident side. 
   
   
       14 . A radiation imaging system according to  claim 7 , wherein at least one of the signal wiring and the gate wiring disposed between the plurality of insulating layers is disposed within a region in which the conversion element is disposed when the radiation imaging system is viewed from a light or radiation incident side. 
   
   
       15 . An imaging apparatus according to  claim 1 , further comprising a light-emitting member disposed on an opposite side of the insulation substrate from the conversion element. 
   
   
       16 . A radiation imaging system according to  claim 7 , further comprising a light-emitting member disposed on an opposite side of the insulation substrate from the conversion element. 
   
   
       17 . An imaging apparatus according to  claim 1 , wherein the insulating layer at the thin-film transistor side among the plurality of insulating layers contains a black matrix material. 
   
   
       18 . A radiation imaging system according to  claim 7 , wherein the insulating layer at the thin-film transistor side among the plurality of insulating layers contains a black matrix material.