Structure for Preventing Leakage of a Semiconductor Device

Abstract

A structure for preventing leakage of a semiconductor device is provided. The structure comprises a shielding line, for shielding the features beneath thereof, located under a conductive line which crosses over a region having high voltage device. The shielding line is wider than the conductive line.

1 . A high voltage transistor structure, at least comprising:
 two first-type high voltage transistors on a substrate;   a second-type well on the substrate and located between the two first-type high voltage transistors;   a guard ring on the substrate and surrounding the first-type high voltage transistors;   a first insulation layer located on the first-type high voltage transistors, the second-type well and the guard ring;   at least one conductive line located on the first insulation layer and crossing over the second-type well; and   a shielding line located between the second-type well and the first insulation layer for shielding a portion of the second-type well from the conductive line.   
   
   
       2 . The structure of  claim 1 , wherein the first-type high voltage transistors are P-type high voltage transistors or N-type high voltage transistors. 
   
   
       3 . The structure of  claim 2 , wherein the second-type well is N-type well or P-type well. 
   
   
       4 . The structure of  claim 1 , wherein a material of the guard ring is doped polysilicon or silicide. 
   
   
       5 . The structure of  claim 1 , wherein the shielding line electrically connects the guard ring. 
   
   
       6 . The structure of  claim 1 , wherein the guard ring is grounded. 
   
   
       7 . The structure of  claim 1 , wherein the shielding line and the second-type well have similar width. 
   
   
       8 . The structure of  claim 1 , wherein the shielding line is wider than the second-type well. 
   
   
       9 . The structure of  claim 1 , wherein the shielding line comprises:
 a second insulation layer on the substrate; and   a shielding layer on the second insulation layer.   
   
   
       10 . The structure of  claim 9 , wherein the shielding layer electrically connects the guard ring. 
   
   
       11 . The structure of  claim 1 , wherein a material of the shielding layer is selected from the group consisting of metal, doped silicon, silicide and the combination thereof.