Deposit removal method

Abstract

A deposit removal method including a first process of stripping at least part of a deposit that has deposited on inner walls of a reaction chamber and/or a surface of components located inside the reaction chamber where a deposited film is formed from the inner walls of the reaction chamber and/or the surface of components located inside the reaction chamber; and a second process of physically removing the stripped deposit.

1 . A deposit removal method comprising:
 a first process of stripping at least part of a deposit that has deposited on inner walls of a reaction chamber and/or a surface of components located inside the reaction chamber where a deposited film is formed from the inner walls of the reaction chamber and/or the surface of components located inside the reaction chamber; and   a second process of physically removing the stripped deposit.   
   
   
       2 . The deposit removal method according to  claim 1 , wherein the first process is a process of introducing a first gas including water into the reaction chamber. 
   
   
       3 . The deposit removal method according to  claim 2 , wherein the second process is a process of introducing a second gas that contains less water than the first gas or contains no water at all into the reaction chamber. 
   
   
       4 . The deposit removal method according to  claim 1 , wherein the first process is a process of introducing a first gas including oxygen molecules into the reaction chamber. 
   
   
       5 . The deposit removal method according to  claim 4 , wherein the second process is a process of introducing a second gas that contains fewer oxygen molecules than the first gas or contains no oxygen molecules at all into the reaction chamber. 
   
   
       6 . The deposit removal method according to  claim 1 , wherein the deposit that has deposited on inner walls of a reaction chamber and/or a surface of components located inside the reaction chamber is a silicon film.