Precursor containing copper indium and gallium for selenide (sulfide) compound formation

Abstract

The present invention relates to systems and methods for preparing metallic precursor thin films for the growth of semiconductor compounds to be used for radiation detector and solar cell fabrication. In one aspect, there is provided a method of efficiently using expensive materials necessary for the making of solar cells.

1 - 9 . (canceled) 
     
     
         10 . A method of forming a Cu(In,Ga)(S,Se)2 semiconductor layer on a base comprising; depositing a first film comprising only copper on the base using a physical vapor deposition method; electroplating a layer comprising indium and gallium over the copper film, thus forming a precursor stack; and reacting the precursor stack with at least one of selenium and sulfur. 
     
     
         11 . The method according to  claim 10  wherein the step of depositing uses sputtering. 
     
     
         12 . The method according to  claim 11  wherein the step of electroplating the layer comprises electroplating a gallium film on the surface of the copper film and electroplating an indium film on the surface of the gallium film. 
     
     
         13 . The method according to  claim 11  wherein the step of electroplating the layer comprises electroplating an In—Ga alloy film on the surface of the copper film.