Semiconductor device having ohmic recessed electrode

Abstract

The present invention provides a semiconductor device having a recess-structured ohmic electrode, in which the resistance is small and variation in the resistance value caused by manufacturing irregularities is small. In the semiconductor device of the present invention, a two-dimensional electron gas layer is formed on the interface between a channel-forming layer and a Schottky layer by electrons supplied from the Schottky layer. The ohmic electrode comprises a plurality of side faces in ohmic contact with the two-dimensional electron gas layer. At least a part of side faces of the ohmic electrodes are non-parallel to a channel width direction. In a preferred embodiment of the present invention, the side faces have a saw tooth form or a comb tooth form. Since the contact area between the ohmic electrode and the two-dimensional electron gas layer is increased, ohmic resistance is reduced.

1 . A semiconductor device comprising:
 a channel-forming layer formed on a semiconductor substrate;   a Schottky layer formed on said channel-forming layer;   a two-dimensional electron gas layer formed on an interface between said Schottky layer and said channel-forming layer by an electron supplied to said channel-forming layer from said Schottky layer;   a gate electrode formed on said Schottky layer via a cap layer; and   a recess-structured ohmic electrode containing a plurality of side faces which are in ohmic contact with said two-dimensional electron gas layer and non-parallel to a channel width direction.   
     
     
         2 . The semiconductor device according to  claim 1 , wherein a side of said ohmic electrode in ohmic contact with said two-dimensional electron gas layer has a saw tooth shape. 
     
     
         3 . The semiconductor device according to  claim 1 , wherein a side of said ohmic electrode in ohmic contact with said two-dimensional electron gas layer has a comb tooth shape.