Semiconductor Device and Manufacturing Method Thereof

Abstract

A high voltage semiconductor device and a manufacturing method thereof are provided. The high voltage semiconductor device comprises: second conductive type drift regions disposed spaced from each other on a first conductive type well region formed on a first conductive type semiconductor substrate; a gate electrode on a channel region between the second conductive type drift regions with a gate insulating film disposed therebetween; second conductive type high-concentration source and drain each disposed in the second conductive type drift regions, spaced from a side of a gate electrode; a gate spacer having a spacer part covering the side of the gate electrode and a spacer extending part to cover a spaced portion of the second conductive type high-concentration source and drain from the side of the gate electrode; and a silicide formed on the gate electrode and the second conductive type high-concentration source and drain.

1 . A high voltage semiconductor device comprising:
 a first drift region of a second conductive type and a second drift region of the second conductive type formed spaced apart from each other on a first conductive type well region of a semiconductor substrate;   a gate electrode formed on a channel region corresponding to a portion of the first conductive type well region between the first and second drift regions with a gate insulating film disposed therebetween;   a second conductive type high-concentration source disposed in the first drift region and spaced a first spaced interval from the gate electrode, and a second conductive type high-concentration drain disposed in the second drift region and spaced a second spaced interval from the gate electrode;   a gate spacer comprising a spacer part covering sides of the gate electrode and a spacer extending part on the first and second drift regions extended to cover the first spaced interval between the gate electrode and the second conductive type high-concentration source and the second spaced interval between the gate electrode and the second conductive type high-concentration drain, respectively, wherein a top portion of the spacer part extends higher than a upper surface of the high voltage gate electrode; and   a silicide formed on the gate electrode, the second conductive type high-concentration source and the second conductive type high-concentration drain.   
   
   
       2 . The semiconductor device according to  claim 1 , wherein the upper surface of the gate electrode is disposed lower than the spacer part of the gate spacer. 
   
   
       3 . The semiconductor device according to  claim 1 , wherein the first spaced interval and the second spaced interval are in the range of 0.4 μm to 0.6 μm. 
   
   
       4 . The semiconductor device according to  claim 1 , wherein the thickness of the spacer extending part of the gate spacer is in the range of 800 Å to 1,200 Å. 
   
   
       5 . The semiconductor device according to  claim 1 , wherein the gate spacer comprises nitride and/or oxide. 
   
   
       6 . The semiconductor device according to  claim 1 , further comprising a source electrode connected to the second conductive type high-concentration source and a drain electrode connected to the second conductive type high-concentration drain. 
   
   
       7 . The semiconductor device according to  claim 1 , wherein the first spaced interval is the same size as the second spaced interval.