Nitride-based semiconductor light-emitting device

Abstract

It is intended to improve operation characteristics of a nitride-based semiconductor light-emitting device including a nitride-based semiconductor crystal substrate having a main surface of a non-polarity plane. A nitride-based semiconductor light-emitting device includes a nitride-based semiconductor crystal substrate and semiconductor stacked-layer structure of crystalline nitride-based semiconductor formed on a main surface of the substrate, wherein the semiconductor staked-layer structure includes an active layer sandwiched between an n-type layer and a p-type layer, the main surface of the substrate has a crystallographic plane tilted from a {10-10} plane of the nitride-based semiconductor crystal by an angle of more than −0.5° and less than −0.05° or more than +0.05° and less than +0.5° about a <0001> axis.

1 . A nitride-based semiconductor light-emitting device comprising:
 a nitride-based semiconductor crystal substrate and semiconductor stacked-layer structure of crystalline nitride-based semiconductor formed on a main surface of the substrate,   wherein the semiconductor staked-layer structure includes an active layer sandwiched between an n-type layer and a p-type layer, the main surface of the substrate has a crystallographic plane tilted from a {10-10} plane of the nitride-based semiconductor crystal by an angle of more than −0.5° and less than −0.05° or more than +0.05° and less than +0.5 about a <0001> axis.   
   
   
       2 . The nitride-based semiconductor light-emitting device according to  claim 1 ,
 wherein said light-emitting device is a laser device including a cavity, and the cavity has its lengthwise direction parallel to a <0001> direction and both end faces of a {0001} plane.