Ald method and apparatus

Abstract

A method and an apparatus for executing efficient and cost-effective Atomic Layer Deposition (ALD) at low temperatures are presented. ALD films such as oxides and nitrides are produced at low temperatures under controllable and mild oxidizing conditions over substrates and devices that are moisture- and oxygen-sensitive. ALD films, such as oxides, nitrides, semiconductors and metals, are efficiently and cost-effectively deposited from conventional metal precursors and activated nonmetal sources. Additionally, substrate preparation methods for optimized ALD are disclosed.

1 - 96 . (canceled) 
   
   
       97 . A method of treating a solid film on a substrate, comprising:
 introducing a plurality of catalyzing reactants into a reaction chamber containing said solid film;   characterized in that said plurality of catalyzing reactants react in a catalyzing reaction;   said catalyzing reaction is continuous and non-saturating;   said catalyzing reaction generates a volatile by-product and an intermediate reactive molecular fragment;   said intermediate reactive molecular fragment reacts with said solid film in a fragment-film reaction; and   further comprising controlling a temperature of said chemical film to control said treating.   
   
   
       98 . A method as in  claim 97  wherein said intermediate reactive molecular fragment comprises hydrogen, and said hydrogen is incorporated into said chemical film during said fragment-film reaction. 
   
   
       99 . A method as in  claim 97  wherein said intermediate reactive molecular fragment comprises a hydrogen atom, and said hydrogen improves an interface between said solid film and said substrate. 
   
   
       100 . A method as in  claim 97  wherein said intermediate reactive molecular fragment comprises a hydrogen atom, and said hydrogen atom removes an in-film impurity. 
   
   
       101 . A method as in  claim 100  wherein said in-film impurity is selected from the group consisting of F, O, OH, Cl, and C. 
   
   
       102 . A method as in  claim 97  wherein said intermediate reactive molecular fragment comprises a dopant atom, and said dopant atom is incorporated into said chemical film during said fragment-film reaction. 
   
   
       103 . A method as in  claim 102  wherein said dopant atom is selected from the group consisting of B and P. 
   
   
       104 . A method as in  claim 97  wherein said treating comprises annealing said chemical film. 
   
   
       105 - 117 . (canceled)