Chemical mechanical polishing pad having electrospun polishing layer

Abstract

Chemical mechanical polishing pads having an electrospun polishing layer are provided, wherein the electrospun polishing layer has a polishing surface that is adapted for polishing a semiconductor substrate. Also provided are methods of making such chemical mechanical polishing pads and for using them to polish semiconductor substrates.

1 . A chemical mechanical polishing pad for polishing semiconductor substrates, comprising:
 an electrospun polishing layer;   wherein the electrospun polishing layer has a polishing surface that is adapted for polishing a semiconductor substrate.   
     
     
         2 . The chemical mechanical polishing pad of  claim 1 , wherein the electrospun polishing layer has a thickness of ≧10 mils. 
     
     
         3 . The chemical mechanical polishing pad of  claim 1 , wherein the electrospun polishing layer has an average pore size ≦5 μm. 
     
     
         4 . The chemical mechanical polishing pad of  claim 1 , wherein the electrospun polishing layer is formed of electrostatically spun organic fibers, wherein the fibers have a diameter of 100 to 2,000 nm. 
     
     
         5 . The chemical mechanical polishing pad of  claim 1 , wherein the polishing surface of the electrospun polishing layer exhibits a texture to facilitate polishing of the semiconductor substrate. 
     
     
         6 . A method for producing a chemical mechanical polishing pad, comprising:
 electrostatically spinning at least one liquid spinning composition through at least one spinneret to form spun fibers and collecting the spun fibers on a target to provide an electrospun polishing layer having a polishing surface, wherein the polishing surface is adapted for polishing a semiconductor substrate.   
     
     
         7 . The method of  claim 6 , wherein the target is a volume of a conductive liquid. 
     
     
         8 . A method of polishing a semiconductor substrate, comprising:
 a) providing a chemical mechanical polishing pad comprising an electrospun polishing layer, wherein the electrospun polishing layer has a thickness of ≧10 mils and wherein the electrospun polishing layer has a polishing surface;   b) providing a semiconductor substrate; and,   c) creating dynamic contact between the polishing surface and the semiconductor substrate to polish a surface of the semiconductor substrate.   
     
     
         9 . The method of  claim 8 , wherein the polishing surface is self renewing and steps (b) and (c) are repeated multiple times without a need for abrasive conditioning of the polishing surface.