Conditioner for Chemical Mechanical Planarization Pad

Abstract

The present invention provides a conditioner for CMP pad required for global planarization of wafer to achieve high integration of a semiconductor element. The conditioner for CMP pad includes a metal substrate having abrasive particles fixed thereto, a plurality of abrasive particles fixed to the metal substrate, and a layer of metal binder fixing the abrasive particles to the metal substrate. The abrasive particles include at least one pattern. The pattern includes at least one row of abrasive particles and the abrasive particles include bigger abrasive particles and smaller abrasive particles. In addition, a diameter difference between smaller and bigger abrasive particles is 10 to 40%. The present invention ensures uniform dressing of conditioner, superior dressing efficiency and superior performance reproducibility.

1 - 20 . (canceled) 
   
   
       21 . A conditioner for Chemical Mechanical Planarization (CMP) pad comprising: a metal substrate having abrasive particles fixed thereto; a number of abrasive particles fixed to the metal substrate; and a layer of metal binder fixing the abrasive particles to the metal substrate, wherein the abrasive particles have at least two patterns, the pattern including at least one row of abrasive particles, the abrasive particles including bigger abrasive particles and smaller abrasive particles, wherein a diameter difference between smaller and big abrasive particles is 10 to 40%, and wherein the pattern comprises a pattern of bigger abrasive particles and a pattern of smaller abrasive particles alternately arranged. 
   
   
       22 . The conditioner for CMP pad according to  claim 21 , wherein the abrasive particles comprise one selected from a group consisting of super-abrasive particle, cubic boron nitride (CBN) particle and diamond particle. 
   
   
       23 . A conditioner for Chemical Mechanical Planarization (CMP) pad comprising: a metal substrate having abrasive particles fixed thereto; a number of abrasive particles fixed to the metal substrate; and a layer of metal binder fixing the abrasive particles to the metal substrate, wherein the abrasive particles have at least three patterns, each pattern including at least one row of abrasive particles, the abrasive particles including three groups of abrasive particles of different sizes, respectively, wherein a diameter difference of abrasive particles between a group of biggest abrasive particles and a group of smallest abrasive particles is 10 to 40%, and wherein the pattern comprises a pattern of bigger abrasive particles, a pattern of mid-sized abrasive particles and a pattern of smaller abrasive particles alternately arranged. 
   
   
       24 . The conditioner for CMP pad according to  claim 23  wherein the abrasive particles comprise one selected from a group consisting of super abrasive particle, cubic boron nitride (CBN) particle and diamond particle.