Dlc coating system and process and apparatus for making coating system

Abstract

A process and an arrangement by means of which it is possible to generate a layer system for the protection against wear, for the protection against corrosion and for improving the sliding properties or the like, which has an adhesive layer for the arrangement on a substrate, a transition layer for the arrangement on the adhesive layer and a cover layer of an adamantine carbon, the adhesive layer including at least one element from the Group which contains the elements of the 4 th , 5 th and 6 th Subgroup and silicon, the transition layer comprising carbon and at least one element from the above-mentioned Group, and the cover layer consisting essentially adamantine carbon, the layer system having a hardness of at least 15 GPa, preferably at least 20 GPa, and an adhesion of at least 3 HF.

1 . Arrangement for coating one or several substrates, particularly for the implementation of the coating process for the protection against wear, for the protection against corrosion and for improving the sliding properties and the like, having an adhesive layer for the arrangement on a substrate, a transition layer for the arrangement on the adhesive layer and a cover layer of an adamantine carbon, said arrangement including substrate holding devices for receiving the substrates to be coated, at least one gas supply unit for the metered addition of process gas, at least one vaporizer device for providing coating material for the vapor depositing, an arc generating device for igniting a direct-voltage low-voltage arc, a device for generating a substrate bias voltage, and having at least one or several magnetic field generating devices for forming a magnetic far field. 
   
   
       2 . Arrangement according to  claim 1 , wherein the magnetic field generating device is formed by at least one Helmholtz coil. 
   
   
       3 . Arrangement according to  claim 2 , wherein the Helmholtz coil can be controlled with respect to the producible magnetic flux density. 
   
   
       4 . Arrangement according to  claim 1 , wherein the arrangement for generating a substrate bias voltage is designed such that the substrate bias voltage can be varied continuously or in steps with respect to at least one of a preceding sign and an amount of the applied substrate bias voltage and can be operated in a bipolar or unipolar manner with a frequency in a medium frequency range. 
   
   
       5 . Arrangement according to  claim 1 , wherein the vaporizer device comprises at least one sputter targets, arc sources, thermal vaporizers, crucibles heated by low-voltage arcs and other thermal evaporation apparatus. 
   
   
       6 . Arrangement according to  claim 1 , wherein the vaporizer device is able to separated from the remaining process chamber. 
   
   
       7 . Arrangement according to  claim 1 , wherein the arrangement comprises a substrate heating system in the form of one of an inductive heater and a radiant heater. 
   
   
       8 . Arrangement according to  claim 1 , wherein the arc generating device comprises an ion source and an anode as well as a direct voltage supply, the ion source being connected with the negative pole of the direct voltage supply. 
   
   
       9 . Arrangement according to  claim 8 , wherein the positive pole of the direct voltage supply is able to be connected with the anode or the substrate holding devices. 
   
   
       10 . Arrangement according to  claim 8 , wherein the ion source comprises a filament made of one of tungsten and tantalum, which is arranged in an ionization chamber which can be separated from the process chamber by a screen, made of one of tungsten and tantalum. 
   
   
       11 . Arrangement according to  claim 1 , wherein, the substrate holding devices are movable, about at least one or several axes. 
   
   
       12 . Arrangement according to  claim 1 , wherein, in addition, permanent magnets are provided for generating a magnetic near field. 
   
   
       13 . Arrangement according to  claim 12 , wherein the additional permanent magnets are constructed in a ring shape around the vacuum chamber with an alternating pole alignment, and are constructed as an magnetron electron trap. 
   
   
       14 . Arrangement according to  claim 1 , wherein the adhesive layer comprises at least one element from the Group which contains the elements of the 4th, 5th and 6th Subgroup and silicon, the transition layer comprises carbon and at least one element from the Group which contains the elements of the 4th, 5th and 6th Subgroup as well as silicon, and the cover layer comprises essentially adamantine carbon, the layer system having a hardness of at least 15 GPa, and an adhesion of at least 3 HF, on a substrate. 
   
   
       15 . The arrangement according to  claim 1 , wherein the adhesive layer comprises at least one element from the Group which contains the elements of the 4th, 5th and 6th Subgroup and silicon, the transition layer comprises carbon and at least one element from the Group which contains the elements of the 4th, 5th and 6th Subgroup as well as silicon, and the cover layer comprises essentially adamantine carbon, the layer system having a hardness of at least 15 GPa, and an adhesion of at least 3 HF, having a vacuum chamber with a pumping system for generating a vacuum in the vacuum chamber,