Manufacturing method of thin-film transistor, thin-film transistor sheet, and electric circuit

Abstract

A thin-film transistor, a thin-film transistor sheet, an electric circuit, and a manufacturing method thereof are disclosed, the method comprising the steps of forming a semiconductor layer by providing a semiconductive material on a substrate, b) forming an insulating area, which is electrode material-repellent, by providing an electrode material-repellent material on the substrate, and c) forming a source electrode on one end of the insulating area and a drain electrode on the other end of the insulating area, by providing an electrode material.

1 . A method of manufacturing an electric circuit comprising a substrate, and provided thereon, an electrode, the method comprising the steps of:
 a) forming an insulating area, which is electrode material-repellent, by providing an electrode material-repellent material on the substrate; and   b) forming an electrode by providing an electrode material on the substrate.   
     
     
         2 . The method of  claim 1 , wherein the insulating area is comprised of a silicone rubber layer. 
     
     
         3 . The method of  claim 1 , wherein the thickness of the insulating area is from 0.05 to 100 μm. 
     
     
         4 . The method of  claim 1 , wherein the providing of the electrode material-repellent material is carried out by an ink jet method. 
     
     
         5 . The method of  claim 1 , wherein the formation of the insulating area is carried out by providing an ink receptive layer on the substrate, and providing an electrode material-repellent material in the ink receptive layer. 
     
     
         6 . The method of  claim 1 , wherein the providing of the electrode material is carried out by an ink jet method. 
     
     
         7 . The method of  claim 1 , wherein the formation of the insulating area is carried out by providing a light sensitive layer on the substrate, providing an electrode material-repellent insulating layer on the light sensitive layer, exposing the resulting material and developing the exposed material. 
     
     
         8 . The method of  claim 7 , wherein the exposing is carried out employing laser. 
     
     
         9 . The method of  claim 7 , wherein the light sensitive layer is an ablation layer. 
     
     
         10 . The method of  claim 7 , wherein the substrate is a resin sheet comprised of a resin. 
     
     
         11 . A thin-film transistor comprising a substrate, and provided thereon, an insulating area, which is electrode material-repellent, a semiconductor layer, a source electrode and a drain electrode wherein each of the source electrode and the drain electrode, which is comprised of an electrode material, is connected to the semiconductor layer and wherein the drain electrode is separated from the source electrode by the insulating area.