US2010023680A1PendingUtilityA1

Method for Controlling Non-Volatile Semiconductor Memory System

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Assignee: TOSHIBA KKPriority: Aug 8, 1997Filed: Sep 22, 2009Published: Jan 28, 2010
Est. expiryAug 8, 2017(expired)· nominal 20-yr term from priority
G06F 12/0246G06F 3/0664G06F 3/0613G11C 16/225G06F 3/064G11C 5/143G11C 29/76G11C 16/102G06F 3/0679G11C 16/00
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Claims

Abstract

In a memory system using a storage medium, which is inserted into an electronic apparatus via a connector to add a memory function thereto, the storage medium has a GROUND terminal, a power supply terminal, a control terminal and a data input/output terminal, and the connector has a function of being sequentially connected to each of the terminals. When the storage medium is inserted into the connector, the GROUND terminal and control terminal of the storage medium are connected to corresponding terminals of the connector before the power supply terminal and data input/output terminal of the storage medium are connected to corresponding terminals of the connector. Thus, it is possible to improve the stability when a memory card is inserted into or ejected from the memory system.

Claims

exact text as granted — not AI-modified
1 - 8 . (canceled) 
   
   
       9 . A method for controlling a memory system which includes a non-volatile semiconductor memory having a plurality of first predetermined units, comprising:
 receiving file data, the file data being organized into second predetermined units; and   storing the file data so that a boundary of the second predetermined units is to be aligned with a boundary of the first predetermined units,   wherein the first predetermined unit is a minimum erase unit of the non-volatile semiconductor memory.   
   
   
       10 . A method for controlling a memory system as set forth in  claim 9 , wherein the second predetermined unit is a cluster and each one of the clusters consists of the same number of sectors. 
   
   
       11 . A method for controlling a memory system as set forth in  claim 10 , wherein the non-volatile semiconductor memory is a NAND-type flash memory including a plurality of blocks and the block is the first predetermined unit. 
   
   
       12 . A method for controlling a memory system as set forth in  claim 11 , wherein two or more entire clusters are capable of being stored in the block. 
   
   
       13 . A method for controlling a memory system as set forth in  claim 12 , further comprising:
 receiving updated file data which supersedes at least one of the clusters in an original block, the original block storing original file data;   writing the updated file data in an empty block which is different from the original block, the empty block is prepared before writing the updated file data;   copying the clusters which are not superseded by the updated file data to the empty block; and   erasing the original file data stored in the original block.   
   
   
       14 . A method for controlling a memory system as set forth in  claim 11 , wherein a size of the block is n (n is integer) times larger than a size of the cluster. 
   
   
       15 . A method for controlling a memory system which includes a non-volatile semiconductor memory having a plurality of first predetermined units, comprising:
 receiving file data, the file data being organized into second predetermined units; and   storing the file data so that the second predetermined units do not straddle a boundary of the first predetermined units,   wherein the first predetermined unit is a minimum erase unit of the non-volatile semiconductor memory.   
   
   
       16 . A method for controlling a memory system as set forth in  claim 15 , wherein the second predetermined unit is a cluster and each one of the clusters consists of the same number of sectors. 
   
   
       17 . A method for controlling a memory system as set forth in  claim 16 , wherein the non-volatile semiconductor memory is a NAND-type flash memory including a plurality of blocks and the block is the first predetermined unit. 
   
   
       18 . A method for controlling a memory system as set forth in  claim 17 , wherein two or more entire clusters are capable of being stored in the block. 
   
   
       19 . A method for controlling a memory system as set forth in  claim 18 , further comprising:
 receiving updated file data which supersedes at least one of the clusters in an original block, the original block storing original file data;   writing the updated file data in an empty block which is different from the original block, the empty block is prepared before writing the updated file data;   copying the clusters which are not superseded by the updated file data to the empty block; and   erasing the original file data stored in the original block.   
   
   
       20 . A method for controlling a memory system as set forth in  claim 17 , wherein a size of the block is n (n is integer) times larger than a size of the cluster. 
   
   
       21 . A method for controlling a memory system as set forth in  claim 11 ,
 wherein the file system is a FAT file system.   
   
   
       22 . A method for controlling a memory system as set forth in  claim 17 ,
 wherein the file system is a FAT file system.

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