Chemical mechanical polishing pad
Abstract
The polishing pad is for polishing patterned semiconductor substrates. The pad includes a polymeric matrix and hollow polymeric particles within the polymeric matrix. The polymeric matrix is a polyurethane reaction product of a curative agent and an isocyanate-terminated polytetramethylene ether glycol at an NH 2 to NCO stoichiometric ratio of 80 to 97 percent. The isocyanate-terminated polytetramethylene ether glycol has an unreacted NCO range of 8.75 to 9.05 weight percent. The hollow polymeric particles having an average diameter of 2 to 50 μm and a wt % b and density b of constituents forming the polishing pad as follows: wt % a * density b density a = wt % b where density a equals an average density of 60 g/l, where density b is an average density of 5 g/l to 500 g/l, where wt % a is 3.25 to 4.25 wt %. The polishing pad has a porosity of 30 to 60 percent by volume; and a closed cell structure within the polymeric matrix forms a continuous network surrounding the closed cell structure.
Claims
exact text as granted — not AI-modified1 . A polishing pad suitable for polishing patterned semiconductor substrates containing at least one of copper, dielectric, barrier and tungsten, the polishing pad comprising a polymeric matrix and hollow polymeric particles within the polymeric matrix, the polymeric matrix being a polyurethane reaction product of a curative agent and an isocyanate-terminated polytetramethylene ether glycol at an NH 2 to NCO stoichiometric ratio of 80 to 97 percent, the isocyanate-terminated polytetramethylene ether glycol having an unreacted NCO range of 8.75 to 9.05 weight percent, the curative agent containing curative amines that cure the isocyanate-terminated polytetramethylene ether glycol to form the polymeric matrix; and the hollow polymeric particles having an average diameter of 2 to 50 μm and a wt % b and density b of constituents forming the polishing pad as follows:
wt
%
a
*
density
b
density
a
=
wt
%
b
where density a equals an average density of 60 g/l,
where density b is an average density of 5 g/l to 500 g/l,
where wt % a is 3.25 to 4.25 wt %,
the polishing pad having a porosity of 30 to 60 percent by volume and a closed cell structure within the polymeric matrix forming a continuous network surrounding the closed cell structure.
2 . The polishing pad of claim 1 wherein the continuous network forms a roughened surface upon conditioning with an abrasive; and the roughened surface is capable of trapping fumed silica particles during polishing.
3 . The polishing pad of claim 1 wherein the polishing pad has a Shore D hardness of 44 to 54.
4 . The polishing pad of claim 1 wherein the polishing pad has a porosity of 35 to 55 volume percent.
5 . The polishing pad of claim 1 wherein the hollow polymeric particles have an average diameter of 10 to 30 μm.
6 . A polishing pad suitable for polishing patterned semiconductor substrates containing at least one of copper, dielectric, barrier and tungsten, the polishing pad comprising a polymeric matrix and hollow polymeric particles within the polymeric matrix, the polymeric matrix being a polyurethane reaction product of a curative agent and an isocyanate-terminated polytetramethylene ether glycol at an NH 2 to NCO stoichiometric ratio of 80 to 90 percent, the isocyanate-terminated polytetramethylene ether glycol having an unreacted NCO range of 8.75 to 9.05 weight percent, the curative agent containing curative amines that cure the isocyanate-terminated polytetramethylene ether glycol to form the polymeric matrix; and the hollow polymeric particles having an average diameter of 2 to 50 μm and a wt % b and density b of constituents forming the polishing pad as follows:
wt
%
a
*
density
b
density
a
=
wt
%
b
where density a equals an average density of 60 g/l,
where density b is an average density of 10 g/l to 300 g/l,
where wt % a is 3.25 to 3.6 wt %,
the polishing pad having a porosity of 35 to 55 percent by volume and a closed cell structure within the polymeric matrix forming a continuous network surrounding the closed cell structure.
7 . The polishing pad of claim 6 wherein the continuous network forms a roughened surface upon conditioning with an abrasive; and the roughened surface is capable of trapping fumed silica particles during polishing.
8 . The polishing pad of claim 6 wherein the polishing pad has a Shore D hardness of 44 to 54.
9 . The polishing pad of claim 6 wherein the polishing pad has a porosity of 35 to 50 volume percent.
10 . The polishing pad of claim 6 wherein the hollow polymeric particles have an average diameter of 10 to 30 μm.Cited by (0)
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