Ag-bi-base alloy sputtering target, and method for producing the same

Abstract

The sputtering target made of a Ag—Bi-base alloy contains Bi in solid solution with Ag. The sputtering target has an intensity of precipitated Bi of 0.01 at % −1 or less, as calculated by the following mathematical expression (1) based on analysis results of X-ray diffraction, and/or a sum of area ratios of predetermined intensities (third to sixth intensities in 8 intensities) of 89 % or more, wherein the area ratios are obtained by calculating a planar distribution of characteristic X-ray intensities of Bi according to X-ray microanalysis: intensity of precipitated Bi=[I Bi(102) /I Ag(111) +I Ag(200) +I Ag(220) +I Ag(311) )]/[Bi]. Remarkable lowering of the yield of Bi content in resultant films can be suppressed by using the sputtering target.

1 . A sputtering target made of an Ag—Bi-base alloy containing Bi in a content of 0.1 to 2 at %, wherein said sputtering target has an average intensity of precipitated Bi of 0.01 at % −1  or less, as represented by the following mathematical expression, the average intensity being obtained by selecting plural sites on a sputtering surface of the sputtering target and by measuring peak intensities of X-ray diffraction, according to an X-ray diffraction method, with respect to the Ag (111) plane, the Ag (200) plane, the Ag (220) plane, the Ag (311) plane, and the Bi (102) plane:
   intensity of precipitated Bi=[I Bi(102) /(I Ag(111) +I Ag(200) +I Ag(220) +I Ag(311) )]/[Bi]   
     where I Bi(102)  represents a peak intensity (unit: counts per second (cps), the unit is the same in the following) of X-ray diffraction with respect to the Bi (102) plane; I Ag(111)  represents a peak intensity of X-ray diffraction with respect to the Ag (111) plane; I Ag(200)  represents a peak intensity of X-ray diffraction with respect to the Ag (200) plane; I Ag(220)  represents a peak intensity of X-ray diffraction with respect to the Ag (220) plane; and I Ag(311)  represents a peak intensity of X-ray diffraction with respect to the Ag (311) plane, and [Bi] represents a content of Bi (unit: at %) in the sputtering target made of the Ag—Bi-base alloy. 
   
   
       2 . The sputtering target made of an Ag—Bi-base alloy film according to  claim 1 , wherein the sputtering target made of a Ag—Bi-base alloy has a sum of area ratios of a third intensity through a sixth intensity of 89% or more, the area ratios being calculated by measuring a planar distribution of characteristic X-ray intensities of Bi on a sputtering surface of the sputtering target according to X-ray microanalysis, the characteristic X-ray intensities being proportionally classified into 8 levels from a first intensity corresponding to a lowest level to an eighth intensity corresponding to a highest level, and respective area ratios of the first intensity through the eighth intensity being calculated, wherein the sum of the respective areas representing the first intensity through the eighth intensity is 100%. 
   
   
       3 . The sputtering target according to  claim 1 , wherein an average crystal grain size of the sputtering target is 200 μm or less. 
   
   
       4 . The sputtering target according to  claim 1 , wherein the sputtering target made of an Ag—Bi-base alloy contains at least one selected from the group consisting of first, second, and third supportive metal elements,
 the first supportive metal element including at least one selected from the group consisting of Mg, Pd, Pt, Au, Zn, Al, Ga, In, Sn, and Sb;   the second supportive metal element including at least one selected from the group consisting of Be, Ru, Rh, Os, Ir, and Ge; and   the third supportive metal element including at least one selected from the group consisting of Y, La, Ce, Nd, Sm, Gd, Tb, Dy, Ti, Zr, and Hf.   
   
   
       5 . A method for producing a sputtering target made of a Ag—Bi-base alloy comprising a solution treatment step of subjecting a product made of the Ag—Bi-base alloy containing Bi in a content of 0.1 to 2 at % to a solution treatment at 350° C. or higher for 0.3 hr or longer with a cooling rate of 3° C./min or faster. 
   
   
       6 . The method according to  claim 5 , wherein the temperature for the solution treatment is 830° C. or lower, and the time for the solution treatment is 13 hr or shorter. 
   
   
       7 . A method for producing an Ag—Bi-base alloy film by sputtering the Ag—Bi-base alloy sputtering target according to  claim 1 . 
   
   
       8 . The sputtering target according to  claim 2 , wherein an average crystal grain size of the sputtering target is 200 μm or less. 
   
   
       9 . The sputtering target according to  claim 2 , wherein the sputtering target made of an Ag—Bi-base alloy contains at least one selected from the group consisting of first, second, and third supportive metal elements,
 the first supportive metal element including at least one selected from the group consisting of Mg, Pd, Pt, Au, Zn, Al, Ga, In, Sn, and Sb;   the second supportive metal element including at least one selected from the group consisting of Be, Ru, Rh, Os, Ir, and Ge; and   the third supportive metal element including at least one selected from the group consisting of Y, La, Ce, Nd, Sm, Gd, Tb, Dy, Ti, Zr, and Hf.   
   
   
       10 . The sputtering target according to  claim 3 , wherein the sputtering target made of an Ag—Bi-base alloy contains at least one selected from the group consisting of first, second, and third supportive metal elements,
 the first supportive metal element including at least one selected from the group consisting of Mg, Pd, Pt, Au, Zn, Al, Ga, In, Sn, and Sb;   the second supportive metal element including at least one selected from the group consisting of Be, Ru, Rh, Os, Ir, and Ge; and   the third supportive metal element including at least one selected from the group consisting of Y, La, Ce, Nd, Sm, Gd, Tb, Dy, Ti, Zr, and Hf.   
   
   
       11 . The sputtering target according to  claim 8 , wherein the sputtering target made of an Ag—Bi-base alloy contains at least one selected from the group consisting of first, second, and third supportive metal elements,
 the first supportive metal element including at least one selected from the group consisting of Mg, Pd, Pt, Au, Zn, Al, Ga, In, Sn, and Sb;   the second supportive metal element including at least one selected from the group consisting of Be, Ru, Rh, Os, Ir, and Ge; and   the third supportive metal element including at least one selected from the group consisting of Y, La, Ce, Nd, Sm, Gd, Tb, Dy, Ti, Zr, and Hf.   
   
   
       12 . A method for producing an Ag—Bi-base alloy film by sputtering the Ag—Bi-base alloy sputtering target according to  claim 2 . 
   
   
       13 . A method for producing an Ag—Bi-base alloy film by sputtering the Ag—Bi-base alloy sputtering target according to  claim 3 . 
   
   
       14 . A method for producing an Ag—Bi-base alloy film by sputtering the Ag—Bi-base alloy sputtering target according to  claim 8 . 
   
   
       15 . A method for producing an Ag—Bi-base alloy film by sputtering the Ag—Bi-base alloy sputtering target according to  claim 4 . 
   
   
       16 . A method for producing an Ag—Bi-base alloy film by sputtering the Ag—Bi-base alloy sputtering target according to  claim 9 . 
   
   
       17 . A method for producing an Ag—Bi-base alloy film by sputtering the Ag—Bi-base alloy sputtering target according to  claim 10 . 
   
   
       18 . A method for producing an Ag—Bi-base alloy film by sputtering the Ag—Bi-base alloy sputtering target according to  claim 11 .