Chemical doping of nano-components

Abstract

A method is provided for doping nano-components, including nanotubes, nanocrystals and nanowires, by exposing the nano-components to an organic amine-containing dopant. A method is also provided for forming a field effect transistor comprising a nano-component that has been doped using such a dopant.

1 . A nanotube field-effect transistor FET comprising:
 a gate;   a gate dielectric deposited on the gate;   a channel comprising a nanotube formed on the gate dielectric, wherein the nanotube has at least one doped portion that is formed by solution processed doping with a dopant selected from the group consisting of hydrazine, mono-, di-, tri- or tetra-kis trimethylsilylhydrazine, a hydrazine derivative, diazobicycloundecane and polyaniline;   a source formed over a first end of the nanotube; and   a drain formed over a second end of the nanotube.   
     
     
         2 . The nanotube FET of  claim 1 , wherein the at least one doped portion is n-doped. 
     
     
         3 . The nanotube FET of  claim 1 , wherein the at least one doped portion serves as a channel for the FET. 
     
     
         4 . The nanotube FET of  claim 1 , further comprising:
 a dielectric layer over a portion of the nanotube; and   a top gate formed on the dielectric layer.   
     
     
         5 . The nanotube FET of  claim 1 , wherein the at least one doped portion comprises a first doped region and a second doped region, and the source is formed on the first doped region and the drain is formed on the second doped region. 
     
     
         6 . The nanotube FET of  claim 1 , wherein the nanotube is a carbon nanotube. 
     
     
         7 . The nanotube FET of  claim 1 , wherein the dopant is one of hydrazine and polyaniline. 
     
     
         8 . The nanotube FET of  claim 1 , wherein the at least one doped portion is n-doped by exposing to leucoemeraldine. 
     
     
         9 . The nanotube FET of  claim 1 , wherein the at least one doped portion is p-doped by exposing to pernigraniline. 
     
     
         10 . A method of forming a field-effect transistor (FET) device comprising the steps of:
 (a) providing a gate;   (b) forming a gate dielectric on the gate;   (c) forming a source over a first portion of the gate dielectric;   (d) forming a drain over a second portion of the gate dielectric;   (e) providing a nano-component on the source, the drain and the gate dielectric, thereby forming a channel comprising the nano-component between the source and the drain; and   (f) exposing the nano-component to a solution containing a dopant selected from the group consisting of hydrazine, mono-, di-, tri- or tetra-kis trimethylsilylhydrazine, a hydrazine derivative, diazobicycloundecane, and polyaniline.   
     
     
         11 . The method of  claim 10 , wherein the steps of (c) and (d) comprises the steps of:
 applying a resist layer over the gate dielectric;   patterning the resist layer;   forming a metal layer over the patterned resist layer and the gate dielectric;   and exposing the patterned resist layer to a resist liftoff component to remove the patterned resist layer and a portion of the metal layer, thereby leaving at least two other portions of the metal layer to form the drain and the source.   
     
     
         12 . The method of  claim 10 , wherein the nano-component is a carbon nanotube. 
     
     
         13 . The method of  claim 10 , wherein the dopant is one of hydrazine and polyaniline. 
     
     
         14 . The method of  claim 10 , wherein hydrazine is provided in solution at a concentration between about 0.1M to about 10M and a temperature between about 20° C. and 50° C. 
     
     
         15 . The method of  claim 10 , wherein polyaniline is provided in solution at a concentration between about 0.5 mM to about 50 mM and a temperature between about 20° C. and 50° C. 
     
     
         16 . A nanotube field-effect transistor (FET) comprising:
 a gate;   a gate dielectric deposited on the gate;   a source formed over a first portion of the gate dielectric;   a drain formed over a second portion of the gate dielectric; and   a channel comprising a naiiotube formed on the gate dielectric, wherein the nanotube has been doped by exposing to a dopant selected from the group consisting of hydrazine, mono-, di-, tri- or tetra-kis trimethylsilylhydrazine, a hydrazine derivative, diazobicycloundecane and polyaniline.   
     
     
         17 . The FET of  claim 16 , wherein the nanotube is a carbon nanotube. 
     
     
         18 . The FET of  claim 16 , wherein the dopant is one of hydrazine and polyaniline. 
     
     
         19 . The FET of  claim 16 , wherein the at least one doped portion is n-doped by exposing to leucoemeraldine. 
     
     
         20 . The FET of  claim 16 , wherein the at least one doped portion is p-doped by exposing to pernigraniline.