Spin bowl compatible polyamic acids/imides as wet developable polymer binders for anti-reflective coatings

Abstract

Anti-reflective compositions and methods of using these compositions to form circuits are provided. The compositions comprise a polymer dissolved or dispersed in a solvent system. In a preferred embodiment, the polymers of the composition include recurring monomers having the formulas where: (1) each R is individually selected from the group consisting of hydrogen, —OH, aliphatics, and phenyls; and (2) L is selected from the group consisting of —SO 2 — and —CR′ 2 —, where each R′ is individually selected from the group consisting of hydrogen, aliphatics, phenyls, and —CX 3 , where each X is individually selected from the group consisting of the halogens. The resulting compositions are spin bowl compatible (i.e., they do not crosslink prior to the bake stages of the microlithographic processes or during storage at room temperature), are wet developable, and have superior optical properties.

1 . A method of using a composition in photolithographic processes, said method comprising the steps of:
 applying a quantity of a composition to a substrate to form a layer thereon, said composition comprising a polymer dissolved or dispersed in a solvent system, said polymer comprising recurring monomers having the formulas   
     
       
         
         
             
             
         
       
     
     where each of 
     
       
         
         
             
             
         
       
     
     individually represent an aryl or aliphatic group; and
 exposing at least a portion of said layer to DUV light. 
 
   
   
       2 . The method of  claim 1 , further including the step of baking said layer, after said applying step, at a temperature of from about 100-250° C. to yield a cured layer. 
   
   
       3 . The method of  claim 2 , further including the step of applying a photoresist to said cured layer prior to said exposing step. 
   
   
       4 . The method of  claim 3 , wherein said exposing step comprises exposing said photoresist to DUV light. 
   
   
       5 . The method of  claim 4 , furthering including the steps of developing said photoresist after said exposing step, 
   
   
       6 . The method of  claim 5 , wherein said developing step results in the removal of said cured layer from areas adjacent said exposed photoresist. 
   
   
       7 . A method of using a composition in photolithographic processes, said method comprising the steps of:
 applying a quantity of a composition to a substrate to form a layer thereon, said composition comprising a polyamic acid dissolved or dispersed in a solvent system; and   exposing at least a portion of said layer to DUV light.   
   
   
       8 . The method of  claim 7 , wherein said polyamic acid is a copolymer of a compound having the formula 
     
       
         
         
             
             
         
       
     
     where 
     
       
         
         
             
             
         
       
     
     represents an aryl or aliphatic group,
 and a compound having the formula 
 
     
       
         
         
             
             
         
       
     
     where 
     
       
         
         
             
             
         
       
     
     represents an aryl or aliphatic group. 
   
   
       9 . The method of  claim 8 , wherein (I) is selected from the group consisting of 
     
       
         
         
             
             
         
       
     
   
   
       10 . The method of  claim 8 , wherein (II) is selected from the group consisting of 
     
       
         
         
             
             
         
       
     
   
   
       11 . The method of  claim 7 , said polyamic acid comprising recurring monomers having the formulas 
     
       
         
         
             
             
         
       
     
     where each of 
     
       
         
         
             
             
         
       
     
     individually represent an aryl or aliphatic group. 
   
   
       12 . The method of  claim 7 , further including the step or baking said layer, after said applying step, at a temperature of from about 100-250° C. to yield a cured layer. 
   
   
       13 . The method of  claim 12 , further including the step of applying a photoresist to said cured layer prior to said exposing step. 
   
   
       14 . The method of  claim 13 , wherein said exposing step comprises exposing said photoresist to DUV light. 
   
   
       15 . The method of  claim 14 , furthering including the steps of developing said photoresist after said exposing step. 
   
   
       16 . The method of  claim 15 , wherein said developing step results in the removal of said cured layer from areas adjacent said exposed photoresist.