Metal Deposition

Abstract

Systems and methods include depositing one or more materials on a voltage switchable dielectric material. In certain aspects, a voltage switchable dielectric material is disposed on a conductive backplane. In some embodiments, a voltage switchable dielectric material includes regions having different characteristic voltages associated with deposition thereon. Some embodiments include masking, and may include the use of a removable contact mask. Certain embodiments include electrografting. Some embodiments include an intermediate layer disposed between two layers.

1 . A method for fabricating a current-carrying formation, the method comprising:
 providing a layer of a voltage switchable dielectric material, the layer including a first region having a first characteristic voltage and a second region having a second characteristic voltage greater than the first characteristic voltage;   exposing the voltage switchable dielectric material to a source of ions associated with an electrical conductor;   creating a first voltage between the layer and the source of ions, the first voltage greater than the first characteristic voltage and less than the second characteristic voltage; and   depositing the electrical conductor on the first region.   
     
     
         2 . The method of  claim 1 , wherein the layer is provided on a conductive backplane. 
     
     
         3 . The method of  claim 1  wherein the voltage switchable dielectric material in the first region has a first thickness and the voltage switchable dielectric material in the second region has a second thickness. 
     
     
         4 . The method of  claim 1 , wherein the electrical conductor is not deposited on the second region under the first voltage. 
     
     
         5 . The method of  claim 1 , wherein any of the first and second regions includes two or more voltage switchable dielectric materials. 
     
     
         6 . The method of  claim 1 , wherein the electrical conductor includes any of Cu, Al, Ti, Ag, Au, and Pt. 
     
     
         7 . The method of  claim 1 , wherein depositing includes electroplating. 
     
     
         8 . The method of  claim 1 , wherein the first voltage includes a cyclic voltage. 
     
     
         9 . The method of  claim 1 , wherein the first voltage is between 2 and 50 volts. 
     
     
         10 . The method of  claim 9 , wherein the first voltage is between 5 and 20 volts. 
     
     
         11 . The method of  claim 1 , further comprising:
 creating a second voltage between the layer and the source of ions, the second voltage greater than the first and second characteristic voltages; and   depositing the electrical conductor on the first and second regions.   
     
     
         12 . A method for fabricating a current-carrying formation, the method comprising:
 providing a layer of a voltage switchable dielectric material, the layer including a first region having a first characteristic voltage and a second region having a second characteristic voltage greater than the first characteristic voltage;   exposing the voltage switchable dielectric material to a source of ions associated with an electrical conductor;   creating a first voltage between the layer and the source of ions, the first voltage greater than the first and second characteristic voltages; and   depositing the electrical conductor on the first and second regions.   
     
     
         13 . The method of  claim 12 , further comprising etching the electrical conductor from the first region. 
     
     
         14 . The method of  claim 13 , wherein the second region retains at least a portion of the electrical conductor after etching. 
     
     
         15 . The method of  claim 12 , further comprising:
 creating a second voltage between the layer and the source of ions, the second voltage greater than the first characteristic voltage and less than the second characteristic voltage, the second voltage having a polarity that induces an etching of the deposited electrical conductor; and   etching the electrical conductor from the first region.   
     
     
         16 . The method of  claim 15 , wherein the second region retains at least a portion of the electrical conductor after etching. 
     
     
         17 . The method of  claim 12 , wherein the layer is provided on a conductive backplane. 
     
     
         18 . The method of  claim 12  wherein the voltage switchable dielectric material in the first region has a first thickness and the voltage switchable dielectric material in the second region has a second thickness. 
     
     
         19 . The method of  claim 12 , wherein any of the first and second regions includes two or more voltage switchable dielectric materials. 
     
     
         20 . The method of  claim 12 , wherein the electrical conductor includes any of Cu, Al, Ti, Ag, Au, and Pt. 
     
     
         21 . The method of  claim 12 , wherein depositing includes electroplating. 
     
     
         22 . The method of  claim 12 , wherein the first voltage includes a cyclic voltage. 
     
     
         23 . The method of  claim 15 , wherein the second voltage includes a cyclic voltage. 
     
     
         24 . A structure comprising:
 a conductive backplane;   a voltage switchable dielectric material disposed on the conductive backplane, the voltage switchable dielectric material having a first region with a first characteristic voltage and a second region with a second characteristic voltage; and   one or more conductors deposited on any of the first and second regions.