Silicon Nanoparticle Precursor

Abstract

A Si nanoparticle precursor, precursor fabrication process, and precursor deposition process are presented. The method for forming a silicon (Si) nanoparticle precursor provides a plurality of nanoparticle classes, including at least one Si nanoparticle class. The nanoparticles in each nanoparticle class are defined as having a predetermined diameter. A predetermined amount of each nanoparticle class is measured and combined. For example, a first Si nanoparticle class may be provided having a largest diameter and a second Si nanoparticle class having a second-largest diameter equal to about (0.43)×(the largest diameter). As another example, Si nanoparticle classes may foe provided having a diameter ratio of about 77:32:17.

1 . A method for forming a silicon (Si) nanoparticle precursor, the method comprising:
 providing a plurality of nanoparticle classes, including at least one Si nanoparticle class, the nanoparticles in each nanoparticle class having a predetermined diameter;   measuring a predetermined amount of each nanoparticle class; and,   combining the nanoparticle classes.   
   
   
       2 . The method of  claim 1  further comprising:
 measuring a predetermined amount of liquid silane; and,   wherein combining the nanoparticle classes includes combining a plurality of Si nanoparticle classes with the liquid silane.   
   
   
       3 . The method of  claim 2  wherein measuring the predetermined amount of liquid silane includes measuring liquid silane with a volume in a range of about 5 to 15%, as compared to the combined volume of the Si nanoparticle classes. 
   
   
       4 . The method of  claim 1  wherein providing the nanoparticle classes includes providing at least one class of germanium (Ge) nanoparticles:
 the method further comprising:   measuring a predetermined amount of liquid silane; and,   wherein combining the nanoparticle classes includes combining a Si nanoparticle class, liquid silane, and the Ge nanoparticle class.   
   
   
       5 . The method of  claim 1  wherein providing the Si nanoparticle class includes providing a first Si nanoparticle class having a largest diameter and a second Si nanoparticle class having a second-largest diameter equal to about (0.43)×(the largest diameter). 
   
   
       6 . The method of  claim 1  wherein providing the Si nanoparticle class includes providing Si nanoparticle classes having a diameter ratio selected from a group consisting of first ratio of about 77:32:17 and a second ratio of about 77:32:17:D, where D is in a range of about 12-14. 
   
   
       7 . The method of  claim 6  wherein measuring a predetermined amount of each Si nanoparticle class includes measuring the first ratio in a corresponding weight % ratio of about 956:69:21. 
   
   
       8 . The method of  claim 4  wherein providing the Si nanoparticle class and the Ge nanoparticle class includes providing diameter ratio selected from a group consisting of third ratio of about 77(Si):32(Ge) and a fourth ratio of about 77(Si):32(Si):17(Ge). 
   
   
       9 . The method of  claim 2  wherein measuring the predetermined amount of liquid silane includes measuring a liquid silane selected from a group consisting of monosilane, disilane, trisilane, cyclotrisilane, cyclobutasilane, cyclopentasilane, cyclohexasilane, and cycloheptasilane. 
   
   
       10 . The method of  claim 1  wherein providing the Si nanoparticle class includes supplying a Si nanoparticle class having a diameter tolerance in a range of ±10%. 
   
   
       11 . The method of  claim 1  further comprising:
 measuring a predetermined volume of liquid germane in a range of about 0 to 1.5%, as compared to the combined volume of the Si nanoparticle classes; and,   wherein combining the nanoparticle classes includes combining a plurality of Si nanoparticle classes with the liquid germane.   
   
   
       12 . A method for forming a silicon (Si) thin-film from a Si nanoparticle precursor, the method comprising:
 providing a substrate;   depositing a Si nanoparticle precursor overlying the substrate, the Si nanoparticle precursor including a predetermined amount from at least one Si nanoparticle class, where each class includes nanoparticles having a predetermined diameter;   sintering the Si nanoparticle precursor at a first temperature, or less; and,   forming a Si thin-film.   
   
   
       13 . The method of  claim 12  wherein depositing the Si nanoparticle precursor includes depositing a Si nanoparticle precursor with a plurality of Si nanoparticle classes and a predetermined amount of liquid silane; and,
 wherein sintering the Si nanoparticle precursor includes sintering at a second temperature, less than the first temperature.   
   
   
       14 . The method of  claim 13  wherein depositing the Si nanoparticle precursor with liquid silane includes depositing Si nanoparticle precursor with a volume of liquid silane in a range of about 5 to 15%, as compared to the combined volume of the Si nanoparticle classes. 
   
   
       15 . The method of  claim 12  wherein depositing the Si nanoparticle precursor includes depositing a Si nanoparticle precursor including a predetermined amount of at least one germanium (Ge) nanoparticle class and a predetermined amount of liquid silane; and,
 wherein sintering the Si nanoparticle precursor includes sintering at a third temperature, less than the first temperature.   
   
   
       16 . The method of  claim 12  wherein depositing the Si nanoparticle precursor includes depositing a first Si nanoparticle class having a largest diameter and a second Si nanoparticle class having a second-largest diameter equal to about (0.43)×(the largest diameter). 
   
   
       17 . The method of  claim 12  wherein depositing the Si nanoparticle precursor includes wherein depositing Si nanoparticle classes having a diameter ratio selected from a group consisting of first ratio of about 77:32:17 and a second ratio of about 77:32:17:D, where D is in a range of about 12-14. 
   
   
       18 . The method of  claim 17  wherein depositing the Si nanoparticle precursor includes depositing the first ratio in a corresponding weight % ratio of about 956:69:21. 
   
   
       19 . The method of  claim 14  wherein depositing the Si nanoparticle precursor includes depositing Si nanoparticle classes and a Ge nanoparticle class selected from a group consisting of third ratio of about 77(Si):32(Ge) and a fourth ratio of about 77(Si):32(Si):17(Ge). 
   
   
       20 . The method of  claim 13  wherein depositing the Si nanoparticle precursor with liquid silane includes depositing a liquid silane selected from a group consisting of monosilane, disilane, trisilane, cyclotrisilane, cyclobutasilane, cyclopentasilane, cyclohexasilane, and cycloheptasilane. 
   
   
       21 . The method of  claim 12  wherein sintering includes an annealing operation, in an inert environment, selected from a group consisting of furnace, laser, rapid thermal, and flash lamp annealing. 
   
   
       22 . The method of  claim 12  wherein depositing the Si nanoparticle precursor includes depositing a Si nanoparticle precursor formed exclusively from Si nanoparticle classes; and,
 wherein sintering the Si nanoparticle precursor includes sintering at the first temperature.   
   
   
       23 . The method of  claim 1  wherein providing the Si nanoparticle precursor includes supplying the nanoparticle classes dissolved in a solvent selected from a group consisting of hydrocarbon solvents, ether solvents, and polar solvents. 
   
   
       24 . A silicon (Si) nanoparticle precursor comprising:
 a combination of nanoparticle classes, including at least one Si nanoparticle class, the nanoparticles in each nanoparticle class having a predetermined diameter, and where the volume of each nanoparticle class is measured in a predetermined amount.   
   
   
       25 . The precursor of  claim 24  further comprising:
 a predetermined amount of liquid silane; and,   wherein the combination of nanoparticle classes includes a plurality of Si nanoparticle classes.   
   
   
       26 . The precursor of  claim 24  further comprising:
 a predetermined amount of liquid silane; and,   wherein the combination of nanoparticle classes includes at least one class of germanium (Ge) nanoparticles.