System and method for plasma plating
Abstract
An exemplary system and method for plasma plating are disclosed. The system may comprise a vacuum chamber, a filament positioned within the vacuum chamber and operable to receive a depositant, and a depositant positioned at the filament. The system may also comprise a platform positioned within the vacuum chamber, a substrate positioned at the platform, a DC power supply generating a DC signal, a radio frequency transmitter generating a radio frequency signal, an electrically conductive path that electrically couples the DC signal and the radio frequency signal to the substrate, and a filament power control electrically coupled to the filament and generating a current through the filament at an amplitude to generate heat in the filament to melt the depositant.
Claims
exact text as granted — not AI-modified1 . A system for plasma plating comprising:
a vacuum chamber at a pressure defined by a range that extends from 0.1 milliTorr to 4 milliTorr; a filament positioned within the vacuum chamber and operable to receive a depositant; a depositant positioned at the filament; a platform positioned within the vacuum chamber; a substrate positioned at the platform; a DC power supply generating a DC signal at a voltage amplitude defined by a range that extends from 1 volt to 5000 volts; a radio frequency transmitter generating a radio frequency signal at a power level defined by a range that extends from 1 watt to 50 watts; an electrically conductive path that electrically couples the DC signal and the radio frequency signal to the substrate; and a filament power control electrically coupled to the filament and generating a current through the filament at an amplitude to generate heat in the filament to melt the depositant.
2 . The system of claim 2 , further comprising a gas in the vacuum chamber.
3 . The system of claim 2 , wherein the gas is a noble gas.
4 . The system of claim 2 , wherein the gas is an inert gas.
5 . The system of claim 2 , wherein the gas is argon.
6 . The system of claim 1 , further comprising:
a vacuum system operable to assist with maintaining the pressure in the vacuum chamber at the pressure defined by the range that extends from 0.1 milliTorr to 4 milliTorr; and a gas flowing into the vacuum chamber operable to assist with maintaining the pressure in the vacuum chamber at the pressure defined by the range that extends from 0.1 milliTorr to 4 milliTorr.
7 . The system of claim 1 , wherein the filament and the depositant are positioned at a distance no greater than 6 inches from the substrate.
8 . The system of claim 1 , wherein the vacuum chamber is at a pressure defined by a range that extends from 0.5 milliTorr and 1.5 milliTorr.
9 . The system of claim 1 , wherein the DC power supply is generating a DC signal at a voltage amplitude defined by a range that extends from 500 volts to 750 volts.
10 . The system of claim 1 , wherein the DC signal is provided at a negative polarity.
11 . The system of claim 1 , wherein the radio frequency transmitter is generating a radio frequency signal at a power level defined by a range that extends from 5 watt to 15 watts.
12 . The system of claim 1 , wherein the vacuum chamber is at a pressure defined by a range that extends from 0.5 milliTorr and 1.5 milliTorr, the DC power supply is generating a DC signal at a voltage amplitude defined by a range that extends from negative 500 volts to negative 750 volts, and the radio frequency transmitter is generating a radio frequency signal at a power level defined by a range that extends from 5 watt to 15 watts.
13 . The system of claim 1 , further comprising:
a DC signal/radio frequency signal mixer mixing the DC signal and the radio frequency signal before the electrically conductive path electrically couples the DC signal and the radio frequency signal to the substrate.
14 . The system of claim 13 , further comprising:
a radio frequency balancing network receiving the DC signal and the radio frequency signal generated by the DC signal/radio frequency signal mixer and minimizing the standing wave reflected power.
15 . The system of claim 14 , wherein the minimizing the standing wave reflected power is performed using an automatic control.
16 . The system of claim 14 , wherein the minimizing the standing wave reflected power is performed using a manual control.
17 . The system of claim 1 , wherein a magnet is not introduced to produce a magnetic field near the substrate.Cited by (0)
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