US2010068124A1PendingUtilityA1
Nanostructure devices and fabrication method
Est. expiryOct 1, 2024(expired)· nominal 20-yr term from priority
Inventors:Ramsey M. Stevens
B82Y 15/00B82Y 40/00Y10S977/842B82Y 35/00G01Q 60/38Y10S977/84B82Y 30/00Y10S977/901C01B 32/168G01Q 70/12
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Claims
Abstract
An ion flux is directed to a carbon nanotube to permanently shape, straighten and/or bend the carbon nanotube into a desired configuration. Such carbon nanotubes have many properties that make them ideal as probes for Scanning Probe Microscopy and many other applications.
Claims
exact text as granted — not AI-modified1 . A method comprising:
altering a shape of a prefabricated nanostructure to mold the nanostructure into a desired configuration.
2 . The method of claim 1 , further comprising:
applying an ion flux or beam to alter the shape of the prefabricated nanostructure.
3 . The method of claim 2 , wherein the ion flux or beam is applied in a given direction to alter the shape of the prefabricated nanostructure in the given direction.
4 . The method of claim 1 , wherein the nanostructure is a carbon nanotube.
5 . The method of claim 1 , wherein the altering of the shape of the nanostructure includes one or more of:
bending the nanostructure in a desired direction; bending the nanostructure in multiple directions; generating a sharp bend in the nanostructure in a desired direction; generating multiple bends in the nanostructure; generating multiple sharp bends in the nanostructure; straightening a preexisting bend in the nanostructure; or imparting directionality to the nanostructure.
6 . The method of claim 5 , wherein the sharp bend is used for defining electromagnetic phenomena.
7 . The method of claim 1 , wherein the nanostructure that is molded into the desired configuration is suitable for forming a probe tip.
8 . The method of claim 7 , wherein the probe tip is used in at least one of:
an atomic force microscope; or a scanning probe microscope.
9 . The method of claim 1 , wherein the nanostructure that is molded into the desired configuration is suitable for use in at least one of:
a nanostructure antenna; nanostructure tweezers; a nanostructure manipulator device; a nanostructure actuator device; or a nanostructure lever arm.
10 . The method of claim 1 , wherein the nanostructure that is molded into the desired configuration is suitable for use in at least one of:
a field emitter; a sensor; a logic device; an electrical contact; or an electrical interconnect.
11 . A device comprising:
a nanostructure that is molded into a desired configuration, wherein the nanostructure is molded into the desired configuration by altering a shape of the nanostructure in a desired direction.
12 . The device of claim 11 , wherein an ion flux or beam is applied from an ion source to the nanostructure to alter the shape of the nanostructure.
13 . The device of claim 12 , wherein the ion flux or beam is applied in a given direction to alter the shape of the nanostructure in the given direction.
14 . The device of claim 12 , wherein the ion source causes the nanostructure to bend in a direction of the ion flux or beam.
15 . The device of claim 11 , wherein the nanostructure is a carbon nanotube.
16 . The device of claim 11 , wherein the altering of the shape of the nanostructure includes one or more of:
bending the nanostructure in a desired direction; bending the nanostructure in multiple directions; generating a sharp bend in the nanostructure in a desired direction; generating multiple bends in the nanostructure; generating multiple sharp bends in the nanostructure; straightening a preexisting bend in the nanostructure; or imparting directionality to the nanostructure.
17 . The device of claim 16 , wherein the sharp bend is used for defining electromagnetic phenomena.
18 . The device of claim 13 , wherein a unidirectional ion flux is applied onto the nanostructure to impart directionality to the nanostructure.
19 . The device of claim 13 , wherein the ion flux or beam comprises energetic ions supplied by an ion source.
20 . The device of claim 19 , wherein the ion source comprises a Focused Ion Beam (FIB) instrument
21 . The device of claim 20 , wherein the FIB instrument comprises a dual beam FIB instrument having means for providing an electron beam and an ion beam.
22 . The device of claim 20 , wherein the FIB instrument is operated in a mode selected from a group consisting of an etch mode and a raster scanning mode.
23 . The device of claim 19 , wherein the ion source comprises a gallium ion source.
24 . The device of claim 13 , wherein the ion flux or beam is focused.
25 . The device of claim 13 , wherein the ion flux or beam is diffuse.
26 . The device of claim 13 , wherein the ion flux or beam comprises at least one ion beam.
27 . The device of claim 19 , wherein the ion source comprises operating parameters selected from a group consisting of an ion beam current, an acceleration voltage, a dwell time and a beam density, further wherein the operating parameters of the ion source are optimized to tailor a modification of the nanostructure.
28 . The device of claim 11 , wherein the nanostructure that is molded into a desired configuration is suitable for forming a probe tip.
29 . The device of claim 28 , wherein the probe tip is used in at least one of:
an atomic force microscope; or a scanning probe microscope.
30 . The device of claim 11 , wherein the nanostructure that is molded into a desired configuration is suitable for use in at least one of:
a nanostructure antenna; a nanostructure tweezer; a nanostructure manipulator device; a nanostructure actuator device; or a nanostructure lever arm.
31 . The device of claim 11 , wherein the nanostructure that is molded into a desired configuration is suitable for use in at least one of:
a field emitter; a sensor; a logic device; an electrical contact; or an electrical interconnect.
32 . A device comprising:
a carbon nanotube (CNT) that is molded into a desired configuration, wherein an ion flux radiation from an ion source is applied to mold the CNT into the desired configuration by altering a shape of the CNT in a direction relative to a direction of the ion flux radiation.
33 . The device of claim 32 , wherein the CNT is a single walled structure grown using a thermal chemical vapor deposition process.
34 . The device of claim 32 , wherein the CNT is a multi-walled structure grown using a thermal chemical vapor deposition process.
35 . The device of claim 32 , wherein the CNT is suitable for forming a probe tip.
36 . The device of claim 35 , wherein the probe tip is used in at least one of:
an atomic force microscope; or a scanning probe microscope.
37 . The device of claim 32 , wherein the CNT is suitable for use in at least one of:
a nanotube based antenna device; nanotube tweezers; a nanotube based manipulator device; a nanotube based actuator; or a nanotube based lever arm.
38 . The device of claim 32 , wherein the CNT is suitable for use in at least one of:
a field emitter; a sensor; a logic device; an electrical contact; or an electrical interconnect.
39 . The device of claim 32 , wherein a dual-beam structure is utilized to apply the ion flux radiation.
40 . The device of claim 39 , wherein the dual-beam structure includes an electron beam component and an ion beam component.
41 . The device of claim 32 , wherein the altering of the shape of the CNT includes one or more of:
bending the nanostructure in a desired direction; bending the nanostructure in multiple directions; generating a sharp bend in the nanostructure in a desired direction; generating multiple bends in the nanostructure; generating multiple sharp bends in the nanostructure; straightening a preexisting bend in the nanostructure; or imparting directionality to the nanostructure.Cited by (0)
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