US2010090172A1PendingUtilityA1

Stabilized resistive switching memory

Assignee: SYMETRIX CORPPriority: Nov 8, 2006Filed: Nov 13, 2009Published: Apr 15, 2010
Est. expiryNov 8, 2026(~0.3 yrs left)· nominal 20-yr term from priority
H10N 70/20H10N 70/8833H10N 70/023H10N 70/826H10N 70/041H10N 70/021H10B 63/30
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Claims

Abstract

A non-volatile resistive switching memory that includes a material which changes between the insulative and conductive states. The material is stabilized against charge trapping by oxygen vacancies by an extrinsic ligand, such as carbon.

Claims

exact text as granted — not AI-modified
1 - 19 . (canceled) 
   
   
       20 . A precursor for making a resistive switching material capable of switching between a conducting state and an insulating state, said precursor comprising a transition metal and a ligand capable of stabilizing said insulating state so that said material has a memory window that changes less than 50% over a temperature range of from minus 50° C. to 75° C. 
   
   
       21 . A precursor as in  claim 20  wherein said transition metal is selected from the group consisting of aluminum, cadmium, chromium, cobalt, copper, gold, iron, manganese, mercury, molybdenum, nickel, palladium, rhenium, ruthenium, silver, tin, titanium, vanadium, and zinc. 
   
   
       22 . A precursor as in  claim 20  wherein said ligand is selected from the group consisting of carbon, carbon compounds, and ammonia. 
   
   
       23 . A precursor as in  claim 20  wherein said ligand comprises one or more elements selected from the group consisting of oxygen, hydrogen, fluorine, carbon, nitrogen, chlorine, bromine, sulphur, and iodine. 
   
   
       24 - 25 . (canceled) 
   
   
       26 . A precursor as in  claim 21  wherein said ligand comprises one or more elements selected from the group consisting of oxygen, hydrogen, fluorine, carbon, nitrogen, chlorine, bromine, sulphur, and iodine. 
   
   
       27 . A precursor as in  claim 26  wherein said ligand further includes an one or more extrinsic ligands selected from the group consisting of carbon, carbon compounds, and ammonia. 
   
   
       28 . A precursor for making a resistive switching material capable of switching between a conducting state and an insulating state, said precursor comprising a transition metal and one or more ligands selected from the group consisting of carbon, carbon compounds, and ammonia. 
   
   
       29 . A precursor as in  claim 28  wherein said transition metal is selected from the group consisting of aluminum, cadmium, chromium, cobalt, copper, gold, iron, manganese, mercury, molybdenum, nickel, palladium, rhenium, ruthenium, silver, tin, titanium, vanadium, and zinc.

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