Process for making titanium dioxide

Abstract

The disclosure relates to a process for making titanium dioxide, comprising: reacting titanium tetrachloride with oxygen by contacting the titanium tetrachloride with the oxygen in a vapor phase reactor under mixing conditions and at an elevated temperature to form a gaseous product stream containing titanium dioxide; separating the titanium dioxide from the gaseous product stream to form a process stream; analyzing the process stream to detect a concentration of titanium tetrachloride in the process stream; comparing the concentration of titanium tetrachloride detected in the process stream to an aim point concentration; and modifying the oxidation conditions to restore or maintain the concentration of titanium tetrachloride in the process stream at the aim point. In one embodiment, the process further comprises contacting the gaseous product stream with silicon tetrachloride under mixing conditions and at an elevated temperature to at least partially encapsulate the titanium dioxide with a silicon-containing compound and separating the at least partially encapsulated titanium dioxide from the gaseous product stream and analyzing the process stream to detect a concentration silicon tetrachloride for comparison to a silicon tetrachloride aim point concentration so that the conditions for silicon tetrachloride contacting can be modified to restore or maintain the concentration of silicon tetrachloride in the process stream.

1 . A process for making titanium dioxide, comprising:
 (a) reacting titanium tetrachloride with oxygen by contacting the titanium tetrachloride with the oxygen in an oxidation reactor under oxidation conditions to form a gaseous product stream containing titanium dioxide;   (b) separating the titanium dioxide from the gaseous product stream to form a process stream;   (c) analyzing the process stream to detect a concentration of titanium tetrachloride in the process stream;   (d) comparing the concentration of titanium tetrachloride detected in the process stream to a titanium tetrachloride aim point concentration; and   (e) modifying the oxidation conditions to restore or maintain the concentration of titanium tetrachloride in the process stream at the aim point.   
   
   
       2 . The process of  claim 1  wherein step (a) further comprises contacting the gaseous product stream with silicon tetrachloride under conditions effective for forming a treated product stream comprising titanium dioxide treated with a silicon-containing compound and wherein in step (b) the gaseous product stream is the treated product stream and the titanium dioxide is separated from the treated product stream. 
   
   
       3 . The process of  claim 2  wherein step (c) further comprises analyzing the process stream to detect a concentration of silicon tetrachloride in the process stream and step (d) further comprises comparing the concentration of silicon tetrachloride detected in the process stream to a silicon tetrachloride aim point concentration; and step (e) further comprises modifying the conditions for contacting the gaseous product stream with silicon tetrachloride to restore or maintain the concentration of silicon tetrachloride in the process stream at the silicon tetrachloride aim point. 
   
   
       4 . The process of  claim 1  in which step (e) further comprises modifying the mixing conditions or the temperature or both to reduce the concentration of titanium tetrachloride in the process stream to reach the titanium tetrachloride aim point. 
   
   
       5 . The process of  claim 3  in which modifying the conditions for contacting the gaseous product stream with silicon tetrachloride reduces the concentration of silicon tetrachloride in the process stream to reach the silicon tetrachloride aim point. 
   
   
       6 . The process of  claim 1  in which the titanium tetrachloride aim point concentration is zero. 
   
   
       7 . The process of  claim 3  in which the silicon tetrachloride aim point concentration is zero. 
   
   
       8 . The process of  claim 1  in which the concentration of titanium tetrachloride is measured by an optical method selected from the group consisting of transmission filter Infrared spectroscopy, transmission Fourier Transform Infrared spectroscopy, Raman spectroscopy, Near Infrared Spectroscopy and Ultraviolet spectroscopy. 
   
   
       9 . The process of  claim 1  in which the concentration of titanium tetrachloride is measured in a frequency range of from 200 nm to 400 nm, 12,500 cm −1  to 4000 cm −1 , and 4000 cm −1  to 400 cm −1 . 
   
   
       10 . The process of  claim 3  in which the concentration of silicon tetrachloride is measured by an optical method selected from the group consisting of transmission filter Infrared spectroscopy, transmission Fourier Transform Infrared spectroscopy, Raman spectroscopy, Near Infrared Spectroscopy and Ultraviolet spectroscopy. 
   
   
       11 . The process of  claim 3  in which the concentration of silicon tetrachloride is measured in a frequency range of from 200 nm to 400 nm, 12,500 cm −1  to 4000 cm −1 , and 4000 cm −1  to 400 cm −1 . 
   
   
       12 . The process of  claim 1  wherein the oxidation conditions comprise a mixing step and an elevated temperature and the oxidation conditions are modified by adjusting the mixing or the temperature or both. 
   
   
       13 . The process of  claim 3  wherein the conditions for contacting the gaseous product stream with silicon tetrachloride comprise a mixing step and an elevated temperature and the silicon tetrachloride contacting conditions are modified by adjusting the mixing or the temperature or both. 
   
   
       14 . The process of  claim 2  in which the titanium dioxide treated with a silicon-containing compound is at least partially encapsulated with silica. 
   
   
       15 . A process for making titanium dioxide, comprising:
 (a) reacting titanium tetrachloride with oxygen by contacting the titanium tetrachloride with the oxygen in an oxidation reactor under oxidation conditions to form a gaseous product stream containing titanium dioxide;   (b) contacting the gaseous product stream with silicon tetrachloride under conditions effective for treating the titanium dioxide with a silicon-containing compound to form a treated product stream;   (c) separating the treated titanium dioxide from the treated product stream to form a process stream;   (d) analyzing the process stream to detect a concentration of silicon tetrachloride;   (e) comparing the concentration of silicon tetrachloride detected in the process stream to a silicon tetrachloride aim point concentration; and   (g) modifying the conditions for contacting the gaseous product stream with silicon tetrachloride to restore or maintain the concentration of silicon tetrachloride in the process stream at the silicon tetrachloride aim point.   
   
   
       16 . The process of  claim 15  further comprising analyzing the process stream to detect a concentration of titanium tetrachloride; comparing the concentration of titanium tetrachloride in the process stream to a titanium tetrachloride aim point concentration; and modifying the oxidation conditions to restore or maintain the concentration of titanium tetrachloride in the gaseous product stream or the process stream at the titanium tetrachloride aim point. 
   
   
       17 . The process of  claim 15  in which the silicon tetrachloride aim point concentration is zero. 
   
   
       18 . The process of  claim 16  in which the titanium tetrachloride aim point concentration is zero. 
   
   
       19 . The process of  claim 15  in which the concentration of silicon tetrachloride is measured by an optical method selected from the group consisting of transmission filter Infrared spectroscopy, transmission Fourier Transform Infrared spectroscopy, Raman spectroscopy, Near Infrared Spectroscopy and Ultraviolet spectroscopy. 
   
   
       20 . The process of  claim 15  in which the concentration of silicon tetrachloride is measured in a frequency range of from 200 nm to 400 nm, 12,500 cm −1  to 4000 cm −1 , and 4000 cm −1  to 400 cm −1 . 
   
   
       21 . The process of  claim 16  in which the concentration of titanium tetrachloride is measured by an optical method selected from the group consisting of transmission filter Infrared spectroscopy, transmission Fourier Transform Infrared spectroscopy, Raman spectroscopy, Near Infrared Spectroscopy and Ultraviolet spectroscopy. 
   
   
       22 . The process of  claim 16  in which the concentration of titanium tetrachloride is measured in a frequency range of from 200 nm to 400 nm, 12,500 cm −1  to 4000 cm −1 , and 4000 cm −1  to 400 cm −1 . 
   
   
       23 . The process of  claim 15  wherein the conditions for contacting the gaseous product stream with silicon tetrachloride comprise a mixing step and an elevated temperature and the silicon tetrachloride contacting conditions are modified by adjusting the mixing or the temperature or both. 
   
   
       24 . The process of  claim 16  wherein the oxidation conditions comprise a mixing step and an elevated temperature and the oxidation conditions are modified by adjusting the mixing or the temperature or both.