Apparatus and method for controlled particle beam manufacturing

Abstract

A chamber for exposing a workpiece to charged particles includes a charged particle source for generating a stream of charged particles, a collimator configured to collimate and direct the stream of charged particles from the charged particle source along an axis, a beam digitizer downstream of the collimator configured to create a digital beam including groups of at least one charged particle by adjusting longitudinal spacing between the charged particles along the axis, a deflector downstream of the beam digitizer including a series of deflection stages disposed longitudinally along the axis to deflect the digital beams, and a workpiece stage downstream of the deflector configured to hold the workpiece.

1 . A method of implanting particles into a workpiece, the method comprising:
 forming a digital beam comprising said particles; and   directing the digital beam towards the workpiece in a pattern in an exposure chamber.   
     
     
         2 . The method of  claim 1 , wherein a dosage of the digital beam is less than about 5×10 17  charged particles/cm 2 . 
     
     
         3 . The method of  claim 1 , wherein a dosage of the digital beam is less than about 5×10 10  charged particles/cm 2 . 
     
     
         4 . The method of  claim 1 , wherein the workpiece is resistless while directing the digital beam. 
     
     
         5 . The method of  claim 1 , further comprising, during directing the digital beam, exposing a surface of the workpiece to a reactant. 
     
     
         6 . The method of  claim 1 , further comprising annealing the implanted particles. 
     
     
         7 . The method of  claim 1 , wherein forming the digital beam comprises:
 forming a stream of the particles;   collimating the stream along an axis of propagation; and   digitizing the stream.   
     
     
         8 . The method of  claim 1 , wherein forming the digital beam comprises creating temporally and spatially resolved digital flashes comprising at least one particle per digital flash. 
     
     
         9 . The method of  claim 1 , wherein directing the digital beam comprises:
 deflecting the digital beam using a series of deflection stages disposed longitudinally along an axis of propagation of the beam; and   demagnifying the digital beam.   
     
     
         10 . A workpiece manufactured by the method of  claim 1 . 
     
     
         11 . A method of implanting at least one dopant into a workpiece, the method comprising:
 forming a beam comprising at least one ion species;   directing the beam towards the workpiece; and   during directing, altering at least one parameter of the beam.   
     
     
         12 . The method of  claim 11 , wherein the parameter comprises ion species. 
     
     
         13 . The method of  claim 11 , wherein the parameter comprises beam energy. 
     
     
         14 . The method of  claim 13 , wherein altering the beam energy comprises varying the beam energy between about 5 and 500 keV. 
     
     
         15 . The method of  claim 11 , wherein the parameter comprises a density of particles in the beam. 
     
     
         16 . The method of  claim 11 , wherein altering the parameter is during directing the beam across a transistor on the workpiece. 
     
     
         17 . The method of  claim 11 , wherein altering the parameter is during directing the beam across a die on the workpiece. 
     
     
         18 . The method of  claim 11 , wherein forming the beam comprises forming a digital beam. 
     
     
         19 . A workpiece manufactured by the method of  claim 11 . 
     
     
         20 . A method of processing to implant material into a workpiece, the method comprising:
 directing a digital beam comprising charged particles onto the workpiece in a pattern in an exposure chamber.