Wide-bandgap semiconductor devices

Abstract

A device 100 comprising a substrate 115 having crystal-support-structures 110 thereon, and a III-V crystal 210. The III-V crystal is on a single contact region 140 of one of the crystal-support-structures. An area of the contact region is no more than about 50 percent of a surface area 320 of the III-V crystal.

1 - 12 . (canceled) 
     
     
         13 . A method of manufacturing a an device, comprising:
 forming crystal-support-structures on a substrate, wherein each of said crystal-support-structures has a pre-defined contact region; and   growing a III-V crystal on said contact region of one of said crystal-support-structures, wherein an area of said contact region is no more than about 50 percent of a surface area of said grown III-V crystal.   
     
     
         14 . The method of  claim 13 , wherein forming said crystal-support-structures includes patterning and etching said substrate such that each of said crystal-support-structures each have at least one lateral dimension that is about 1 mm or less. 
     
     
         15 . The method of  claim 14 , wherein said at least one lateral dimension corresponds to a diameter of a pillar-shaped crystal-support-structure, said diameter ranges from about 100 to 300 nanometers, and a height of said pillar-shaped crystal-support-structures ranges from about 2 to 10 microns. 
     
     
         16 . The method of  claim 13 , wherein a lateral separation between adjacent ones of said crystal-support-structures is greater than a lateral thickness of said grown III-V crystal. 
     
     
         17 . The method of  claim 13 , wherein a height of each of said crystal-support-structures is at least 2 times greater than a vertical thickness of said grown III-V crystal. 
     
     
         18 . The method of  claim 13 , wherein said growing of said III-V crystal includes exposing said contact region to group-III atoms and to group-V atoms in a ratio that promotes a faster lateral growth of said III-V crystal than a vertical growth of said III-V crystal. 
     
     
         19 . The method of  claim 18 , further including adjusting said ratio to promote a faster vertical growth rate of said crystal over a lateral growth rate. 
     
     
         20 . The method of  claim 18 , further including extending said exposure until a plurality of said III-V crystals growing on said crystal-support-structures coalesce to form a merged III-V layer. 
     
     
         21 . The method of  claim 20 , further including using said merged III-V layer as a seed layer to grow a thicker III-V crystal film thereon. 
     
     
         22 . The method of  claim 13 , further including filling gaps between adjacent ones of said III-V crystal and said crystal-support-structure with a polymer. 
     
     
         23 . The method of  claim 13 , further including physically separating said III-V crystal from said crystal-support-structure by covering said substrate, having said crystal-support-structures and said III-V crystals thereon, with an adhesive layer such that a top surface of said III-V crystal adheres to said adhesive layer, and then removing said adhesive layer from said substrate with said III-V crystal attached thereto. 
     
     
         24 . The method of  claim 13 , wherein said crystal-support-structures are made of silicon or sapphire. 
     
     
         25 . The method of  claim 13 , wherein said substrate and said crystal-support-structures are both made of silicon, and said III-V crystal includes one or more III-nitrides. 
     
     
         26 . The method of  claim 13 , wherein said grown a III-V crystal has a uniform crystal orientation except for a defect region that is centrally located in said III-V crystal, wherein said defect region occupies less than about 10 percent of a total volume of said III-V crystal.