Light-induced plating

Abstract

An apparatus for the light-supported precipitation of an electrolyte on a semiconductor component comprises a plating bath with an electrolyte, a first electrode arranged in the plating bath and a second electrode arranged outside the plating bath, a holding device for the semiconductor component and an irradiation device for irradiating the semiconductor component with electromagnetic radiation, the irradiation device being arranged outside the plating bath.

1 . An apparatus for the light-supported precipitation of a metal from an electrolyte on a semiconductor component ( 1 ) comprising
 a. a plating bath ( 2 ) with
 i. an electrolyte ( 3 ), 
 ii. a first electrode ( 4 ) arranged in the plating bath ( 2 ) and 
 iii. a second electrode ( 5 ) arranged outside the plating bath ( 2 ), 
   b. a holding device ( 9 ) for the semiconductor component ( 1 ) and   c. an irradiation device ( 15 ) for irradiating the semiconductor component ( 1 ) with electromagnetic radiation,   d. the irradiation device ( 15 ) being arranged outside the plating bath ( 2 ) and   e. the electrolyte forming a layer with a layer thickness of a maximum of 10 mm between the semiconductor component ( 1 ) and the irradiation device ( 15 ).   
     
     
         2 . An apparatus according to  claim 1 , wherein the irradiation device ( 15 ) comprises at least one light-emitting diode (LED). 
     
     
         3 . An apparatus according to  claim 1 , wherein the irradiation device ( 15 ) comprises a plurality of LEDs. 
     
     
         4 . An apparatus according to  claim 1 , wherein the irradiation device ( 15 ) comprises at least one halogen lamp. 
     
     
         5 . An apparatus according to  claim 1 , wherein the electromagnetic radiation generatable by means of the irradiation device exhibits at least a portion in the red to near-infrared wavelength range. 
     
     
         6 . An apparatus according to  claim 1 , wherein the portion in the red to near-infrared wavelength range, exhibited by the electromagnetic radiation generatable by means of the irradiation device, is an intensity maximum. 
     
     
         7 . An apparatus according to  claim 1 , wherein the electromagnetic radiation generatable by means of the irradiation device exhibits at least an intensity maximum in the read to near-infrared wavelength range in the range of 650 nm to 1200 nm. 
     
     
         8 . An apparatus according to  claim 1 , wherein the electromagnetic radiation generatable by means of the irradiation device exhibits at least an intensity maximum in the read to near-infrared wavelength range in the range of 840 nm to 1050 nm. 
     
     
         9 . An apparatus according to  claim 1 , wherein the electromagnetic radiation generatable by means of the irradiation device exhibits at least an intensity maximum in the read to near-infrared wavelength range in the range of 940 nm to 970 nm. 
     
     
         10 . An apparatus according to  claim 1 , wherein the holding device ( 9 ) comprises at least three supports ( 10 ) which are arranged in the plating bath ( 2 ). 
     
     
         11 . An apparatus according to  claim 1 , wherein the holding device ( 9 ) comprises a plurality of supports ( 10 ) which are arranged in the plating bath ( 2 ). 
     
     
         12 . An apparatus according to  claim 10 , wherein the supports ( 10 ) are adjustable. 
     
     
         13 . An apparatus according to  claim 10 , wherein the supports ( 10 ) are at least one of height-adjustable and adjustable sideways. 
     
     
         14 . An apparatus according to  claim 10 , wherein there are envisaged contact elements ( 13 ) for electrically contacting the semiconductor component ( 1 ), which are each arranged in an extension of one of the supports ( 10 ) outside the plating bath ( 2 ). 
     
     
         15 . A method for producing a semiconductor component ( 1 ) comprising the following steps:
 Providing a plating bath ( 2 ) with
 an electrolyte ( 3 ), 
 a first electrode ( 4 ) arranged in the plating bath ( 2 ) and 
 a second electrode ( 5 ) arranged outside the plating bath ( 2 ), 
   providing an irradiation device ( 15 ) for generating electromagnetic radiation,   providing a semiconductor substrate ( 6 ) of a planar design with
 a first side ( 7 ) and 
 a second side ( 8 ) lying opposite thereto, 
   immersing at least the second side ( 8 ) of the semiconductor substrate ( 6 ) into the electrolyte ( 3 ),   producing an electrical contact between the first side ( 7 ) of the semiconductor substrate ( 6 ) and the second electrode ( 5 ),   irradiating at least the first side ( 7 ) of the semiconductor substrate ( 6 ) by means of the irradiation device ( 15 ).   
     
     
         16 . A method according to  claim 15 , wherein the semiconductor substrate ( 6 ) is immersed on partly into the electrolyte ( 3 ). 
     
     
         17 . A method according to  claim 15 , wherein the semiconductor substrate ( 6 ) is immersed on into the electrolyte ( 3 ) only so far that the first side ( 7 ) remains dry. 
     
     
         18 . A method according to  claim 15 , wherein the semiconductor substrate ( 6 ), after immersion into electrolyte ( 3 ), is lifted back out of the electrolyte so far that a surface meniscus ( 17 ) forms between the second side ( 8 ) of the semiconductor substrate ( 6 ) and the electrolyte ( 3 ). 
     
     
         19 . A method according to  claim 15 , wherein the semiconductor substrate ( 6 ) is immersed fully into the electrolyte ( 3 ), however, only so far that the first side ( 7 ) is covered by a layer of a depth of a maximum 10 mm. 
     
     
         20 . A method according to  claim 15 , wherein the semiconductor substrate ( 6 ) is immersed fully into the electrolyte ( 3 ), however, only so far that the first side ( 7 ) is covered by a layer of a depth of a maximum 5 mm. 
     
     
         21 . A method according to  claim 15 , wherein the semiconductor substrate ( 6 ) is immersed fully into the electrolyte ( 3 ), however, only so far that the first side ( 7 ) is covered by a layer of a depth of a maximum 2 mm. 
     
     
         22 . A method according to  claim 15 , wherein the first side ( 7 ) of the semiconductor substrate ( 6 ) is its rear side. 
     
     
         23 . A method according to  claim 15 , wherein the first side ( 7 ) of the semiconductor substrate ( 6 ) is its front side. 
     
     
         24 . A semiconductor component ( 1 ) comprising
 a. a semiconductor substrate ( 6 ) with
 i. a first side ( 7 ), 
 ii. a second side ( 8 ) lying opposite thereto and 
 iii. a thickness (D) in a direction vertically to the sides ( 7 ,  8 ), 
   b. with at least the first side ( 7 ) being designed such that it is, at least in some areas, at least 50% permeable for the electromagnetic radiation with a wavelength in the range of 650 nm to 1200 nm.   
     
     
         25 . A semiconductor component ( 1 ) according to  claim 24 , wherein the semiconductor substrate ( 6 ) is designed such that it is at least 50% permeable, at least in some areas, in at least one direction for electro-magnetic radiation with a wavelength in the range of 650 nm to 1200 nm up to a penetration depth of at least 50% of the thickness (D). 
     
     
         26 . A semiconductor component ( 1 ) according to  claim 24 , wherein the semiconductor substrate ( 6 ) is designed such that it is at least 50% permeable, at least in some areas, in at least one direction for electromagnetic radiation with a wavelength in the range of 650 nm to 1200 nm up to a penetration depth of at least 75% of the thickness (D). 
     
     
         27 . A semiconductor component ( 1 ) according to  claim 24 , wherein the semiconductor substrate ( 6 ) is designed such that it is at least 50% permeable, at least in some areas, in at least one direction for electromagnetic radiation with a wavelength in the range of 650 nm to 1200 nm up to a penetration depth of at least 90% of the thickness (D).