Boost Mechanism Using Driver Current Adjustment for Switching Phase Improvement
Abstract
System and method for providing a boost current to a switching transistor gate is disclosed. A boost capacitor precharged to a voltage level above a gate-source voltage is coupled to a switching transistor gate at the beginning of a switch-on phase. The boost capacitor is decoupled from the switching transistor gate when a boost capacitor voltage falls below the gate-source voltage and is again precharged to the voltage level above the gate-source voltage. A second-phase resistance is coupled between a supply voltage and the switching transistor gate. The second-phase resistance value is selected based upon a current peak detected in the switching transistor. A switch-off capacitor precharged to a voltage level below the gate-source voltage may be coupled to the switching transistor gate at the beginning of a switch-of phase.
Claims
exact text as granted — not AI-modified1 . A method for providing a boost current to a switching transistor gate, comprising:
precharging a boost capacitor to a voltage level above a gate-source voltage; coupling the boost capacitor to the switching transistor gate at the beginning of a switch-on phase; and decoupling the boost capacitor from the switching transistor gate when a boost capacitor voltage falls to or below the gate-source voltage.
2 . The method of claim 1 , further comprising:
precharging the boost capacitor again to the voltage level above the gate-source voltage after the decoupling step and before a subsequent switch-on phase.
3 . The method of claim 1 , further comprising:
coupling a second-phase resistance between a supply voltage and the switching transistor gate, a value of the second-phase resistance selected based upon a desired current level to be applied to the switching transistor gate during the switch-on phase.
4 . The method of claim 3 , wherein the second-phase resistance is coupled between a supply voltage and the switching transistor gate when the boost capacitor is coupled to the switching transistor gate.
5 . The method of claim 3 , wherein the second-phase resistance is coupled between a supply voltage and the switching transistor gate when the boost capacitor is decoupled from the switching transistor gate.
6 . The method of claim 3 , further comprising:
selecting the value of the second-phase resistance based upon detection of a current peak in the switching transistor.
7 . The method of claim 6 , wherein the current peak in the switching transistor is detected by analyzing a negative gradient of a current level in the switching transistor.
8 . The method of claim 1 , further comprising:
precharging a switch-off capacitor to a voltage level below the gate-source voltage; coupling the switch-off capacitor to the switching transistor gate at the beginning of a switch-of phase; and decoupling the switch-off capacitor from the switching transistor gate when a switch-off capacitor voltage rises to or above the gate-source voltage.
9 . The method of claim 8 , further comprising:
precharging the switch-off capacitor again to the voltage level below the gate-source voltage after the decoupling step and before a subsequent switch-off phase.
10 . The method of claim 8 , further comprising:
coupling a second-phase resistance between a supply voltage and the switching transistor gate during a switch-off phase, a value of the second-phase resistance selected based upon a desired current level to be applied to the switching transistor gate during the switch-off phase.
11 . A method of adjusting a gate driver current, comprising:
monitoring a current through a switching transistor to identify a peak current and a load current; determining a current differential between the peak current and the load current; comparing the current differential to one or more reference levels; and adjusting the gate driver current based upon the relationship of the current differential to the one or more reference levels.
12 . The method of claim 11 , wherein the current differential corresponds to a negative gradient in a current value over time.
13 . The method of claim 11 , further comprising:
filtering the results of the comparison step before adjusting the gate driver current.
14 . The method of claim 13 , wherein the filtering is a low pass filter or a decimation filter.
15 . The method of claim 11 , further comprising:
decreasing the gate driver current if the current differential is above a top reference level.
16 . The method of claim 11 , further comprising:
increasing the gate driver current if the current differential is below a lower reference level.
17 . The method of claim 11 , further comprising:
maintaining a current gate driver current if the current differential is between an upper reference level and a lower reference level.
18 . A driver for a switching transistor, the controller comprising:
a first capacitor coupled to a control node through a first switch, the control node configured to be coupled to the switching transistor; a first precharge circuit coupled to the first capacitor; a first resistor coupled to a first reference voltage through a second switch; a controller configured to:
close the first switch during a first phase of operation,
after the first phase of operation when a voltage of the first capacitor crosses a first voltage threshold, open the first switch and close the second during a second phase of operation, and
couple the precharge circuit to the first capacitor when the first switch is open.
19 . The controller of claim 18 , further comprising:
a second capacitor coupled to the control node through a third switch; and a second precharge circuit coupled to the second capacitor, wherein the controller is further configured to open the second switch and close the third switch during a third phase of operation after the second phase of operation, the third phase of operation comprising a switching transistor turn-off phase.
20 . The controller of claim 18 , further comprising the switching transistor comprising a gate coupled to the control node.Cited by (0)
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