US2010112231A1PendingUtilityA1
Graphite-silicon carbide composite and making method
Est. expiryMar 28, 2027(~0.7 yrs left)· nominal 20-yr term from priority
C04B 41/87C04B 35/573Y10T428/24421C04B 2235/786C04B 2235/9684C04B 41/009C04B 41/5059
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Claims
Abstract
A graphite-silicon carbide composite comprises a graphite substrate and a silicon carbide layer formed thereon and comprising silicon carbide particles in fused and contact bonded state. The composite has excellent oxidation resistance and finds a wide range of application as heat resistant material. The method of forming a silicon carbide layer on graphite surface is simple and consistent.
Claims
exact text as granted — not AI-modified1 . A method for preparing a graphite-silicon carbide composite comprising the steps of:
thermally spraying a metallic silicon powder onto a surface of a graphite substrate, and heat treating the sprayed substrate in a non-oxidizing atmosphere at a temperature of 1100° C. to 1700° C. for forming on the substrate surface a silicon carbide layer comprising silicon carbide particles in fused and contact bonded state.
2 . The method of claim 1 , wherein the metallic silicon powder has an average particle size of 0.5 μm to 50 μm.
3 . The method of claim 1 , wherein the temperature of heat treating is 1200° C. to 1500° C.
4 . A method of preparing a graphite-silicon carbide composite comprising the steps of:
plasma spraying a metallic silicon powder having an average particle size of 3 μm to 30 μm onto a surface of a carbon/carbon composite substrate composed of carbon fibers and graphite particles having a mixing ratio of between 7/3 and 3/7 in a thickness of 10 to 300 μm, and heat treating the sprayed substrate in a non-oxidizing atmosphere at a temperature of 1100° C. to 1700° C. for forming on the carbon/carbon composite substrate a silicon carbide layer comprising silicon carbide particles in fused and contact bonded state, thereby obtaining the graphite-silicon carbide composite having a gas permeability equal to or less than 1.0×10 −2 cm 2 /s.
5 . The method of claim 4 , wherein the temperature of heat treating is 1200° C. to 1500° C.
6 . The method of claim 4 , wherein the metallic silicon powder is sprayed in a thickness of 10 to 200 μm.
7 . The method of claim 4 , wherein the gas permeability of the graphite-silicon carbide composite is equal to or less than 1.0×10 −3 cm 2 /s.Join the waitlist — get patent alerts
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