US2010117516A1PendingUtilityA1

Light emitting device and display

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Assignee: SHIMIZU YOSHINORIPriority: Jul 29, 1996Filed: Jan 19, 2010Published: May 13, 2010
Est. expiryJul 29, 2016(expired)· nominal 20-yr term from priority
H10W 90/756H10W 74/00H10W 72/5525H10W 72/5524H10W 72/5522H10W 72/5363H10W 72/884H10W 72/552H10W 72/536C09K 11/7774H10H 20/8513H10H 20/882H10H 20/854H10H 20/8512H10H 20/8511H10H 20/851G02B 6/0023G02B 6/0051H05B 33/14Y02B20/00G02B 6/0025G02B 6/0073C09K 11/7767H01J 29/20
57
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Claims

Abstract

A light emitting device containing a semiconductor light emitting component and a phosphor, the phosphor is capable of absorbing a part of light emitted by the light emitting component and emitting light of a wavelength different from that of the absorbed light, is provided. A straight line connecting a point of chromaticity corresponding to a spectrum generated by the light emitting component and a point of chromaticity corresponding to a spectrum generated by the phosphor is substantially along a black body radiation locus in a chromaticity diagram.

Claims

exact text as granted — not AI-modified
1 . A white light emitting diode comprising:
 a lead,   an LED chip mounted on said lead,   a transparent material covering said LED chip, and   a yellow phosphor contained in said transparent material and absorbing a part of light emitted by the LED chip and emitting light of wavelength different from that of the absorbed light;   wherein said transparent material contains a dispersant.   
     
     
         2 . The light emitting diode according to  claim 1 , wherein said dispersant is selected from the group consisting of barium titanate, titanium oxide, aluminum oxide and silicon dioxide. 
     
     
         3 . The light emitting diode according to  claim 1 , wherein said transparent material comprises:
 a coating material covering said LED chip and including said phosphor; and   a molding material covering said coating material and including said dispersant.   
     
     
         4 . The light emitting diode according to  claim 1 , wherein said transparent material contains a coloration agent. 
     
     
         5 . The light emitting diode according to  claim 1 , wherein the main emission peak of said LED chip is within the range from 400 nm to 530 nm. 
     
     
         6 . The light emitting diode according to  claim 1 , wherein said LED chip emits a light having a spectrum with a peak in the range from 420 to 490 nm, said phosphor emits light having a spectrum with a peak in the range from 510 to 600 nm and a tail continuing beyond 700 nm, and said spectrum of the light emitted from said phosphor and said spectrum of the light emitted from said LED chip overlap with each other to make a continuous combined spectrum. 
     
     
         7 . The light emitting diode according to  claim 6 , wherein said spectrum of the light emitted from said phosphor has a peak in the range from 530 to 570 nm and a tail continuing beyond 700 nm. 
     
     
         8 . The light emitting diode according to  claim 6 , wherein a color of said combined spectrum is white. 
     
     
         9 . The light emitting diode according to  claim 1 , wherein said phosphor comprises two or more kinds of fluorescent materials. 
     
     
         10 . The light emitting diode according to  claim 1 , wherein said phosphor comprises an yttrium-aluminum-garnet fluorescent material containing Y and Al. 
     
     
         11 . The light emitting diode according to  claim 1 , wherein said phosphor has a crystal structure. 
     
     
         12 . The light emitting diode according to  claim 1 , wherein said LED chip comprises a light emitting layer of single quantum well or multi quantum well structure. 
     
     
         13 . The light emitting diode according to  claim 1 , wherein said LED chip comprises InGaN. 
     
     
         14 . The light emitting diode according to  claim 1 , wherein said LED chip comprises a sapphire substrate. 
     
     
         15 . The light emitting diode according to  claim 1 , wherein said transparent material is selected from the group consisting of epoxy resin, urea resin, silicone resin and glass. 
     
     
         16 . The light emitting diode according to  claim 1 , wherein said dispersant reduces the directivity of light emitted from said LED chip. 
     
     
         17 . The light emitting diode according to  claim 1 , wherein said transparent material is made translucent by said dispersant. 
     
     
         18 . The light emitting diode according to  claim 1 , wherein said dispersant has the effect of masking the color of said phosphor so that the color of said phosphor is obscured. 
     
     
         19 . The light emitting diode according to  claim 1 , wherein said dispersant gives a milky white color to said transparent material. 
     
     
         20 . The light emitting diode according to  claim 3 , wherein said dispersant reduces the directivity of light emitted from said LED chip. 
     
     
         21 . The light emitting diode according to  claim 3 , wherein said transparent material is made translucent by said dispersant. 
     
     
         22 . The light emitting diode according to  claim 3 , wherein said dispersant has the effect of masking the color of said phosphor so that the color of said phosphor is obscured. 
     
     
         23 . The light emitting diode according to  claim 3 , wherein said dispersant gives a milky white color to said transparent material.

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