US2010140536A1PendingUtilityA1
Gallium nitride-based material
Est. expiryMar 13, 2026(expired)· nominal 20-yr term from priority
H10P 14/3416H10P 14/2921H10P 14/2908H10P 14/2901H10P 14/24C30B 25/02C30B 29/406C30B 25/165H10P 14/20C30B 29/38
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Abstract
A gallium nitride-based material prepared by a vertical Hydride Vapor Phase Epitaxial Growth method which has thermal conductivity of at least 2.8×10 2 W/m·K at 25° C. is provided.
Claims
exact text as granted — not AI-modified1 - 14 . (canceled)
15 . A substrate consisting of gallium nitride-based material having a thermal conductivity of from 3.0×10 2 W/m·K to 3.8×10 2 W/m·K at 25° C.
16 . A substrate consisting of gallium nitride-based material having a thermal conductivity of from 3.3×10 2 W/m·K to 3.8×10 2 W/m·K at 25° C.
17 . A substrate consisting of gallium nitride-based material having a thermal conductivity of from 3.5×10 2 W/m·K to 3.8×10 2 W/m·K at 25° C.
18 . A substrate consisting of gallium nitride-based material, according to claim 15 , having a 002-plane X-ray rocking curve half-width of not more than 300 arcsec.
19 . A substrate consisting of gallium nitride-based material, according to claim 15 , having a 102-plane X-ray rocking curve half-width of not more than 500 arcsec.
20 . A substrate consisting of gallium nitride-based material, according to claim 15 , having an oxygen concentration of less than 5×10 17 atoms/cm 3 .
21 . A substrate consisting of gallium nitride-based material, according to claim 15 , having a carbon concentration of less than 1×10 17 atoms/cm 3 .
22 . A substrate consisting of gallium nitride-based material, according to claim 15 , having a hydrogen concentration of less than 1×10 18 atoms/cm 3 .Cited by (0)
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