Light emitting diode structure and method for fabricating the same

Abstract

The present invention discloses a light emitting diode structure and a method for fabricating the same. In the present invention, a substrate is placed in a solution to form a chemical reaction layer on carved regions; the carved region is selectively etched to form a plurality of concave zones and form a plurality of convex zones; a semiconductor layer structure is epitaxially grown on the element regions and carved regions of the substrate; the semiconductor layer structure on the element regions is fabricated into a LED element with a photolithographic process.

1 . A light emitting diode structure comprising:
 a substrate, wherein the surface thereof is divided into element regions and carved regions, and a plurality of concave zones and a plurality of convex zones are formed on the surface of said carved region; and   a light emitting element, wherein said light emitting element is formed via epitaxially growing a semiconductor layer structure on said element regions and carved regions of said substrate and via fabricating said semiconductor layer structure on said element region into said light emitting element with a photolithographic process; said semiconductor layer structure on said carved region has a plurality of semiconductor concave zones and a plurality of semiconductor convex zones.   
   
   
       2 . The light emitting diode structure according to  claim 1 , wherein said substrate is made of sapphire, silicon carbide, silicon, gallium arsenide, aluminum nitride, or gallium nitride. 
   
   
       3 . The light emitting diode structure according to  claim 1 , wherein the height difference between said concave zones and said convex zones is from 0.1 to 15 μm. 
   
   
       4 . The light emitting diode structure according to  claim 1 , wherein said semiconductor layer structure is formed via epitaxially forming at least one n-type semiconductor layer, an active layer, and at least one p-type semiconductor layer sequentially, and said active layer functions as a light emitting layer and is interposed between said n-type semiconductor layer and said p-type semiconductor layer; via a photolithographic process, said p-type semiconductor layer on said element region is electrically coupled to a p-type ohmic contact electrode, and said n-type semiconductor layer on said element region is electrically coupled to an n-type ohmic contact electrode, to provide a forward bias for said light emitting diode element; said semiconductor layer structure on said carved region is etched to such an extend that only said n-type semiconductor layer remains, and the surface of said n-type semiconductor layer has a plurality of semiconductor concave zones and a plurality of semiconductor convex zones.