Method of manufacturing semiconductor device, acid etching resistance material and copolymer

Abstract

Disclosed is an acid etching resistance material comprising a compound having a repeating unit represented by the following general formula (1): (in the general formula (1), R 1 is a hydrogen atom or methyl group; R 3 is a cyclic group selected from an alicyclic group and an aromatic group; R 4 is a polar group; R 2 is a group represented by the following general formula (2); and j is 0 or 1): (in the general formula (2), R 5 is a hydrogen atom or methyl group).

1 - 21 . (canceled) 
   
   
       22 . An acid etching resistance material comprising a compound having a repeating unit represented by the following general formula (1) and resistive to a solution containing hydrofluoric acid at a content of 40% or more: 
     
       
         
         
             
             
         
       
       wherein in the general formula (1), R 1  is a hydrogen atom or a methyl group; R 3  is a cyclic group selected from the group consisting of an alicyclic group and an aromatic group, R 4  is a polar group; R 2  is a group represented by the following general formula (2); and J is 0 or 1: 
     
     
       
         
         
             
             
         
       
       wherein in the general formula (2), R 5  is a hydrogen atom or a methyl group. 
     
   
   
       23 . The acid etching resistance material according to  claim 22 , wherein R 3  is an alicyclic group. 
   
   
       24 . The acid etching resistance material according to  claim 23 , wherein R 4  is selected from the group consisting of a carboxyl group, a hydroxyl group, and a ketone. 
   
   
       25 . The acid etching resistance material according to  claim 24 , wherein R 4  is a carboxyl group. 
   
   
       26 . The acid etching resistance material according to  claim 25 , wherein the alicyclic group is selected from the group consisting of adamantane, norbornane, and cyclohexane. 
   
   
       27 . The acid etching resistance material according to  claim 22 , wherein R 3  is an aromatic group. 
   
   
       28 . The acid etching resistance material according to  claim 27 , wherein R 4  is selected from the group consisting of a carboxyl group, a hydroxyl group, and a ketone. 
   
   
       29 . The acid etching resistance material of  claim 28 , wherein R 4  is a carboxyl group. 
   
   
       30 . The acid etching resistance material of  claim 29 , wherein R 3  is a benzene ring. 
   
   
       31 . The acid etching resistance material according to  claim 22 , further comprising not more than 50% by weight of a hydrophobic low molecular weight compound.