Gallium nitride-based material and method of manufacturing the same

Abstract

A method to make gallium nitride-based material by Hydride Vapor Phase Epitaxial Growth is provided.

1 . A method for making a gallium nitride-based material, comprising:
 growing a gallium nitride-based material by Hydride Vapor Phase Epitaxial Growth (HPVE),   wherein said growing comprises:
 supplying a carrier gas comprising H 2  gas, GaCl gas, and NH 3  gas to a reaction chamber, 
 setting a growth temperature to a value ranging from 900° C. to 1,200° C., 
 setting a growth pressure to a value ranging from 8.08×10 4  Pa to 1.21×10 5  Pa, 
 setting a partial pressure of the GaCl gas to a value ranging from 1.0×10 2  Pa to 1.0×10 4  Pa, and 
 setting a partial pressure of the NH 3  gas to a value ranging from 9.1×10 2  (Pa) to 2.0×10 4  Pa. 
   
   
   
       2 . The method according to  claim 1 , wherein the carrier gas consists essentially of H 2  gas. 
   
   
       3 . The method according to  claim 1 , wherein the carrier gas further comprises N 2  gas. 
   
   
       4 . The method according to  claim 3 , wherein the supply of the carrier gas is adjusted such that a ratio of H 2  gas partial pressure to a total of H 2  gas partial pressure and N 2  gas partial pressure is set to a value ranging from 0.1 to less than 1. 
   
   
       5 . The method according to  claim 3 , wherein the supply of the carrier gas is adjusted such that a ratio of H 2  gas partial pressure to a sum of H 2  gas partial pressure and N 2  gas partial pressure is set to a value ranging from 0.6 to less than 1. 
   
   
       6 . The method according to  claim 3 , wherein the supply of the carrier gas is adjusted such that a ratio of H 2  gas partial pressure to a sum of H 2  gas partial pressure and N 2  gas partial pressure is set to a value ranging from 0.7 to less than 1.