Patterning Processes Comprising Amplified Patterns

Abstract

The present invention is directed to substrates comprising amplified patterns, methods for making the amplified patterns, and methods of using the amplified patterns to form surface features on the substrates.

1 . A process for patterning an unmasked substrate, the process comprising:
 (a) providing an unmasked substrate;   (b) depositing onto the unmasked substrate a pattern comprising a first material having a first surface characteristic, wherein the pattern substantially covers a first area of the unmasked substrate;   (c) disposing onto the unmasked substrate a composition having a functional group suitable for associating with the surface of the pattern, wherein the composition deposits preferentially onto the pattern to form an amplified pattern, and wherein an area of the unmasked substrate not covered by the pattern is substantially free from the composition; and   (d) reacting the area of the unmasked substrate not covered by the amplified pattern to form a surface feature thereon, wherein the first area of the substrate covered by the amplified pattern is substantially not reacted.   
     
     
         2 . The process of  claim 1 , further comprising prior to (d): depositing onto the substrate a second pattern comprising a second material having a second surface characteristic, wherein the second surface characteristic is different from the first surface characteristic of the first material, and wherein the second pattern substantially covers a second area of the substrate. 
     
     
         3 . The process of  claim 1 , further comprising after (b): disposing onto the substrate a second material having a second surface characteristic that is different from the first surface characteristic, wherein the second composition deposits preferentially on an area of the substrate not covered by the pattern. 
     
     
         4 . The process of  claim 1 , wherein the reacting comprises at least one of: wet etching, dry etching, electroplating, cleaning, chemically oxidizing, chemically reducing, exposing to ultraviolet light, and combinations thereof. 
     
     
         5 . The process of  claim 4 , wherein the reacting is wet etching. 
     
     
         6 . The process of  claim 1 , further comprising after (c): solidifying the amplified pattern. 
     
     
         7 . The process of  claim 1 , further comprising after (d): removing the amplified pattern from the substrate. 
     
     
         8 . The process of  claim 1 , wherein the providing comprises providing a substrate selected from: a metal, a metal oxide, a glass, a semiconductor, a plastic, a laminate thereof, and combinations thereof. 
     
     
         9 . The process of  claim 1 , wherein the depositing comprises depositing a pattern comprising a self-assembled monolayer. 
     
     
         10 . The process of  claim 9 , wherein the depositing comprises depositing a pattern comprising a self-assembled monolayer by a microcontact printing process. 
     
     
         11 . The process of  claim 1 , wherein the depositing further comprises depositing a first self-assembled monolayer having a hydrophobic surface characteristic. 
     
     
         12 . The process of  claim 1 , wherein the disposing comprises a composition that includes a compound having two or more functional groups suitable for associating with the surface of the pattern. 
     
     
         13 . The process of  claim 1 , wherein the disposing comprises a composition that includes a compound lacking a C—F bond or a Si—F bond. 
     
     
         14 . The process of  claim 1 , wherein the reacting is for a time period of about 1 minute or less. 
     
     
         15 . The process of  claim 1 , wherein the depositing and the disposing occur over a total of about 1 minute or less. 
     
     
         16 . The process of  claim 1 , wherein the providing comprises a laminate substrate that includes a gold layer over a plastic or glass underlayer; wherein the depositing comprises microcontact printing a first material that includes hexadecane thiol onto the gold layer; wherein the disposing comprises a composition that includes hexadecane; and wherein the reacting comprises wet etching the gold layer. 
     
     
         17 . The process of  claim 16 , further comprising after (b) and prior to (c): disposing onto the substrate a second material having a hydrophilic surface characteristic, wherein the second composition deposits preferentially on an area of the substrate not covered by the pattern. 
     
     
         18 . A process for increasing the reaction selectivity between a patterned area of a substrate and an unpatterned area of a substrate, the process comprising:
 (a) providing a substrate having a pattern formed thereon, wherein the pattern comprises a material having a first surface characteristic, wherein the pattern substantially covers a first area of the substrate;   (b) disposing onto the substrate a composition that deposits preferentially on the pattern via a covalent bonding interaction to form an amplified pattern, wherein an area of the substrate not covered by the pattern is substantially free from the composition, wherein the area of the substrate covered by the amplified pattern has a reactivity with a reactant that is at least three times less than the reactivity of an area of the substrate having the unamplified pattern thereon; and   (c) reacting the area of the substrate not covered by the pattern to form a surface feature thereon.   
     
     
         19 . The process of  claim 18 , wherein during the reacting, the area of the substrate not covered by the pattern reacts at least about five times faster than the area of the substrate covered by the amplified pattern. 
     
     
         20 . The process of  claim 18 , wherein the reacting is for a time period of about 1 minute or less.