Carbon Nanotube Transistor Structure

Abstract

A carbon nanotube transistor structure includes a number of carbon nanotubes extending vertically in a substrate material. A drain electrode of the transistor is connected to the carbon nanotubes at a first depth position, and a source electrode for the transistor structure connected to the carbon nanotubes at a second depth position. A gate electrode extends vertically along a side of the nanotubes, between the first and second depth positions. There may be multiple vertical side gate electrodes and multiple carbon nanotubes between these side gate electrodes.

1 . A device comprising:
 a structure comprising an upper surface and a plurality of vertical pores, extending from the upper surface to a depth position below the upper surface;   a plurality of single-walled carbon nanotubes, contained within at least a subset of the vertical pores;   a first electrode region, electrically coupled to the single-walled carbon nanotubes at a first depth position relative to the upper surface;   a second electrode region, electrically coupled the single-walled carbon nanotubes at a second depth position relative to the upper surface, wherein the second depth position is below the first depth position;   a first gate electrode region, extending vertically along a side of the carbon nanotubes between third and fourth depth positions relative to the upper surface, wherein the fourth depth position is between the first and second depth positions; and   a second gate electrode region, extending vertically along a side of the carbon nanotubes between fifth and sixth vertical depth positions relative to the upper surface, wherein the sixth depth position is between the first and second vertical positions, and between the first and second gate electrode regions are at least two single-walled carbon nanotubes.   
     
     
         2 . The device of  claim 1  wherein the first, third, and fifth vertical depth positions are at the upper surface. 
     
     
         3 . The device of  claim 1  wherein the third and fifth vertical depth positions are below the first depth position. 
     
     
         4 . The device of  claim 1  wherein the third and fifth vertical depth positions are below the upper surface. 
     
     
         5 . The device of  claim 1  wherein fourth and sixth depth positions are at about the same depth position relative to the upper surface.