Fabrication method of nitride semiconductor light emitting device and nitride semiconductor light emitting device thereby

Abstract

A method for fabricating a nitride semiconductor light emitting device, and a nitride semiconductor light emitting device fabricated thereby are provided. The method includes: forming a first conductive nitride semiconductor layer on a substrate; forming an active layer on the first conductive nitride semiconductor layer; forming a second conductive nitride semiconductor layer on the active layer; and lowering a temperature while adding oxygen to the result by performing a thermal process.

1 . A light emitting device comprising:
 a first conductive semiconductor layer;   an active layer on the first conductive semiconductor layer; and   a second conductive semiconductor layer on the active layer,   wherein the second conductive semiconductor layer includes Mg—H complexes, a top surface of the second conductive semiconductor layer having Mg—H complexes smaller than a bottom surface of the second conductive semiconductor layer.   
   
   
       2 . The light emitting device according to  claim 1 , wherein at least one of the Mg—H complexes is removed by forming a N 2  atmosphere in a growth chamber and adding oxygen to the growth chamber. 
   
   
       3 . The light emitting device according to  claim 1 , wherein the second conductive semiconductor layer is formed as a structure where a magnesium (Mg) doping amount gradually increases or increases step-by-step. 
   
   
       4 . The light emitting device according to  claim 1 , wherein the first conductive semiconductor layer is an n-type, and the second conductive semiconductor layer is a p-type. 
   
   
       5 . The light emitting device according to  claim 1 , further comprising:
 a buffer layer under the first conductive semiconductor layer.   
   
   
       6 . The light emitting device according to  claim 1 , wherein the active layer includes a single quantum well structure or a multi quantum well structure. 
   
   
       7 . The light emitting device according to  claim 1 , wherein the active layer includes an InGaN well layer and an InGaN barrier layer. 
   
   
       8 . The light emitting device according to  claim 1 , wherein the second conductive semiconductor layer is formed through Mg doping. 
   
   
       9 . The light emitting device according to  claim 1  wherein the second conductive semiconductor layer is formed as a structure where a magnesium (Mg) doping amount gradually increases. 
   
   
       10 . The light emitting device according to  claim 1 , wherein the second conductive semiconductor layer is formed as a multi-layer structure where a magnesium (Mg) doping amount increases step-by-step. 
   
   
       11 . The light emitting device according to  claim 1 , wherein the second conductive semiconductor layer has a thickness of 500 to 2500 Å. 
   
   
       12 . The light emitting device according to  claim 1 , further comprising:
 a substrate under the first conductive semiconductor layer.   
   
   
       13 . The light emitting device according to  claim 1 , wherein the first conductive semiconductor layer includes an indium doped GaN layer. 
   
   
       14 . The light emitting device according to  claim 1 , wherein the first conductive semiconductor layer includes a Si—In co-doped GaN layer. 
   
   
       15 . A light emitting device comprising:
 a first conductive semiconductor layer;   an active layer on the first conductive semiconductor layer; and   a second conductive semiconductor layer on the active layer,   wherein the second conductive semiconductor layer includes Mg—H complexes, and at least one of the Mg—H complexes is removed by forming a N 2  atmosphere and adding oxygen.   
   
   
       16 . The light emitting device according to  claim 15 , wherein the second conductive semiconductor layer is formed at a first temperature of 900 to 1020° C. 
   
   
       17 . The light emitting device according to  claim 16 , wherein a temperature is lowered from the first temperature to room temperature after adding the oxygen to a growth chamber. 
   
   
       18 . The light emitting device according to  claim 15 , wherein the oxygen is combined with the H of the Mg—H complex and the combination of the oxygen and H is out-diffused from the second conductive semiconductor layer. 
   
   
       19 . The light emitting device according to  claim 15 , wherein a top surface of the second conductive semiconductor layer is exposed to the oxygen when the oxygen is added. 
   
   
       20 . The light emitting device according to  claim 15 , wherein the N 2  atmosphere and oxygen are added in-situ in a growth chamber after the first conductive semiconductor layer, the active layer, the second conductive semiconductor layer are formed.