US2010193468A1PendingUtilityA1

Method for edge sealing barrier films

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Assignee: BURROWS PAUL EPriority: Oct 25, 1999Filed: Apr 12, 2010Published: Aug 5, 2010
Est. expiryOct 25, 2019(expired)· nominal 20-yr term from priority
H10W 42/00H10W 42/121H10K 59/8731G02F 1/133337Y02E60/10H10K 71/80C09K 2323/05Y10T156/10
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Claims

Abstract

An edge-sealed, encapsulated environmentally sensitive device. The device includes an environmentally sensitive device, and at least one edge-sealed barrier stack. The edge-sealed barrier stack includes a decoupling layer and at least two barrier layers. The environmentally sensitive device is sealed between an edge-sealed barrier stack and either a substrate or another edge-sealed barrier stack. A method of making the edge-sealed, encapsulated environmentally sensitive device is also disclosed.

Claims

exact text as granted — not AI-modified
1 . A method of making an edge-sealed, encapsulated environmentally sensitive device comprising:
 providing an environmentally sensitive device on a substrate;   placing an edge-sealed barrier stack adjacent to the environmentally sensitive device, the edge-sealed barrier stack comprising a decoupling layer and at least two barrier layers, wherein the decoupling layer has an area, wherein the first barrier layer has an area, and wherein the second barrier layer has an area, the area of the first and second barrier layers being greater than the area of the decoupling layer, and wherein the decoupling layer is sealed between the first and second barrier layers;   wherein at least one barrier layer of the edge-sealed barrier stack is in contact with the substrate, sealing the environmentally sensitive device between the substrate and the edge-sealed barrier stack forming an environmentally sensitive device seal, wherein an oxygen transmission rate through the environmentally sensitive device seal is less than 0.005 cc/m 2 /day at 23° C. and 0% relative humidity.   
     
     
         2 . The method of  claim 1  wherein the edge-sealed barrier stack is formed by:
 depositing a first barrier layer having an area;   depositing a decoupling layer having an area;   depositing a second barrier layer having an area;   the area of the first and second barrier layers being greater than the area of the decoupling layer wherein the first decoupling layer is sealed between the first and second barrier layers.   
     
     
         3 . The method of  claim 2  wherein depositing the decoupling layer comprises:
 providing a mask with an opening; and   depositing the decoupling layer through the opening in the mask so that the area of the decoupling layer is less than the area of the first and second barrier layers.   
     
     
         4 . The method of  claim 3  wherein the mask has an undercut. 
     
     
         5 . The method of  claim 2  wherein depositing the first or second barrier layer comprises:
 providing a mask with an opening; and   depositing the first or second barrier layer through the opening in the mask so that the area of the first or second barrier layer is greater than the area of the decoupling layer.   
     
     
         6 . The method of  claim 5  wherein the mask has an undercut. 
     
     
         7 . The method of  claim 2  wherein depositing the decoupling layer comprises:
 depositing the decoupling layer having an initial area of decoupling material which is greater than the area of the decoupling layer; and   etching the decoupling layer having the initial area to remove a portion of the decoupling material so that the decoupling layer has the area of the decoupling layer.   
     
     
         8 . The method of  claim 7  wherein etching the decoupling layer comprises:
 providing a solid mask over the decoupling layer having the initial area of decoupling material; and   etching the decoupling layer having the initial area of decoupling material to remove the portion of the decoupling material outside the solid mask so that the decoupling layer has the area of the decoupling layer.   
     
     
         9 . The method of  claim 7  wherein the decoupling layer is etched so that at least one edge of the decoupling layer has a gradual slope. 
     
     
         10 . The method of  claim 7  wherein the decoupling layer is etched using a reactive plasma. 
     
     
         11 . The method of  claim 10  wherein the reactive plasma is selected from O 2 , CF 4 , H 2 , or combinations thereof. 
     
     
         12 . The method of  claim 1  wherein placing the edge-sealed barrier stack adjacent to the environmentally sensitive device comprises laminating the edge-sealed barrier stack adjacent to the environmentally sensitive device. 
     
     
         13 . The method of  claim 12  wherein the edge-sealed barrier stack is laminated adjacent to the environmentally sensitive device using a process selected from heating, soldering, using an adhesive, ultrasonic welding, and applying pressure. 
     
     
         14 . The method of  claim 2  wherein the first and second barrier layers are depositing using a vacuum process. 
     
     
         15 . The method of  claim 2  wherein the decoupling layer is deposited using a process selected from vacuum processes or atmospheric processes. 
     
     
         16 . The method of  claim 2  wherein the decoupling layer is deposited using an atmospheric process selected from spin coating, printing, ink jet printing, spraying, or combinations thereof.

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