Die Customization using Programmable Resistance Memory Elements

Abstract

A method of customizing an integrated circuit chip, comprising the steps of: providing an electronic circuit on said chip; providing a phase-change memory on the chip; storing information about said electronic circuit in the phase-change memory. A method of operating an optical display.

1 . A method of operating an optical display, comprising:
 providing said optical display, said optical display including a plurality of pixel elements, at least one of said pixel elements being defective;   providing an electrically programmable phase-change memory; and   storing the address of said defective pixel element in said phase-change memory.   
     
     
         2 . The method of  claim 1 , further comprising:
 storing the address of a corresponding redundant functional pixel element in said phase-change memory.   
     
     
         3 . The method of  claim 2 , further comprising:
 routing a signal from said defective pixel element to said redundant functional pixel element.   
     
     
         4 . The method of  claim 1 , wherein said phase-change memory comprises a chalcogenide material. 
     
     
         5 . The method of  claim 1 , wherein said phase-change memory comprises an array of phase-change memory elements. 
     
     
         6 . A method of operating an optical display, comprising:
 providing said optical display, said optical display including a plurality of defective pixel elements;   providing an electrically programmable phase-change memory; and   storing the addresses of said defective pixel elements in said phase-change memory.   
     
     
         7 . The method of  claim 6 , further comprising:
 storing the addresses of redundant functional pixel elements in said phase-change memory.   
     
     
         8 . The method of  claim 7 , further comprising:
 routing signals from said defective pixels elements to said redundant functional pixel elements.   
     
     
         9 . The method of  claim 6 , wherein said phase-change memory comprises a chalcogenide material. 
     
     
         10 . The method of  claim 6 , wherein said phase-change memory comprises an array of phase-change memory elements.