Method of manufacturing a surface treated member for semiconductor liquid crystal manufacturing apparatus

Abstract

A method of manufacturing a surface treated member used for semiconductor liquid crystal manufacturing apparatus, capable of forming an anodized film at a higher hardness than that of an anodizing film formed of an existent method, with no problem in view of the generation of cracks, and excellent in the balance between a high hardness and reduced cracks by a simple and convenient method by forming an anodized film to the surface of a member having an aluminum alloy or pure aluminum as a basic material, then dipping the same in pure water, and applying a hydrating treatment to the anodized film, wherein the hydrating treatment is conducted under the conditions satisfying that a treatment temperature is 80° C. to 100° C. and a treatment time (min)≧−1.5×treatment temperature (° C.)+270.

1 . A method of manufacturing a surface treated member used for semiconductor liquid crystal manufacturing apparatus by forming an anodizing film to the surface of a member having an aluminum alloy or pure aluminum as a basic material and then dipping the same in pure water, thereby applying a hydrating treatment to the anodized film, wherein
 the hydrating treatment is conducted under the conditions satisfying that   a treatment temperature is from 80° C. to 100° C., and   a treatment time (min)≧−1.5×treatment temperature (° C.)+270.   
   
   
       2 . A method of manufacturing a surface treated member used for semiconductor liquid crystal manufacturing apparatus according to  claim 1 , wherein
 a heat treatment is conducted after the hydrating treatment under the conditions satisfying that   a treatment temperature is from 120 to 450° C., and   a treatment time (min)≧−0.1×treatment temperature (° C.)+71.