Solid-state imaging device having penetration electrode formed in semiconductor substrate

Abstract

A solid-state imaging device includes an imaging element, an external terminal, an insulating film, a penetration electrode, a first insulating interlayer, a first electrode, and a first contact plug. The imaging element is formed on a first main surface of a semiconductor substrate. The external terminal is formed on a second main surface facing the first main surface of the substrate. The insulating film is formed in a through-hole formed in the substrate. The penetration electrode is formed on the insulating film in the through-hole and electrically connected to the external terminal. The first insulating interlayer is formed on the first main surface of the substrate and the penetration electrode. The first electrode is formed on the first insulating interlayer. The first contact plug is formed in the first insulating interlayer between the penetration electrode and the first electrode to electrically connect the penetration electrode and the first electrode.

1 . A solid-state imaging device comprising:
 an imaging element formed on a first main surface of a semiconductor substrate;   an external terminal formed on a second main surface facing the first main surface of the semiconductor substrate;   an insulating film formed in a through-hole formed in the semiconductor substrate;   a penetration electrode formed on the insulating film in the through-hole and electrically connected to the external terminal;   a first insulating interlayer formed on the first main surface of the semiconductor substrate and the penetration electrode;   a first electrode formed on the first insulating interlayer; and   a first contact plug formed in the first insulating interlayer between the penetration electrode and the first electrode to electrically connect the penetration electrode and the first electrode to each other.   
   
   
       2 . The solid-state imaging device according to  claim 1 ,
 wherein, when being viewed from a direction perpendicular to the first main surface of the semiconductor substrate, the first contact plug is arranged in a region in which the penetration electrode and the first insulating interlayer are in contact with each other.   
   
   
       3 . The solid-state imaging device according to  claim 1 , further comprising:
 a second insulating interlayer formed on the first electrode;   a second electrode formed on the second insulating interlayer;   a passivation film formed on the second electrode and the second insulating interlayer to have an opening, the opening partially exposing the second electrode; and   a second contact plug formed between the first electrode and the second electrode to electrically connect the first electrode and the second electrode to each other.   
   
   
       4 . The solid-state imaging device according to  claim 3 ,
 wherein, when being viewed from a direction perpendicular to the first main surface of the semiconductor substrate, the second contact plug is arranged in a region which does not overlap the through-hole.   
   
   
       5 . The solid-state imaging device according to  claim 3 ,
 wherein, when being viewed from a direction perpendicular to the first main surface of the semiconductor substrate, the second contact plug is arranged in a region which does not overlap the opening held in the passivation film.   
   
   
       6 . The solid-state imaging device according to  claim 1 , further comprising:
 a color filter arranged on the imaging element to correspond to the imaging element; and   a microlens arranged on the color filter.   
   
   
       7 . The solid-state imaging device according to  claim 6 , further comprising:
 an optically transparent support substrate arranged above the semiconductor substrate; and   an adhesive agent which causes the semiconductor substrate and the optically transparent support substrate to adhere to each other.   
   
   
       8 . The solid-state imaging device according to  claim 7 ,
 wherein a cavity is present between the microlens and the optically transparent support substrate.   
   
   
       9 . The solid-state imaging device according to  claim 7 , further comprising an imaging lens arranged above the optically transparent support substrate. 
   
   
       10 . The solid-state imaging device according to  claim 9 , further comprising an infrared cut filter arranged between the optically transparent support substrate and the imaging lens. 
   
   
       11 . The solid-state imaging device according to  claim 1 ,
 wherein the penetration electrode electrically connects the imaging element and the external element to each other.   
   
   
       12 . The solid-state imaging device according to  claim 1 ,
 wherein the imaging element includes a photodiode and a transistor.