Thin film transistor panel, liquid crystal display having the same and method of manufacturing the thin film transistor panel

Abstract

A thin film transistor panel, a liquid crystal display having the same, and a method of manufacturing the thin film transistor panel are provided. The thin film transistor includes a gate line formed on an insulating substrate in a predetermined direction, a data line crossing the gate line, a thin film transistor connected to the gate line and the data line, a black matrix formed to overlap at least a portion of the gate line, the data line, and the thin film transistor, a color filter formed in a region partitioned by the black matrix, and a pixel electrode formed on the color filter and electrically connected to the thin film transistor.

1 - 15 . (canceled) 
   
   
       16 . A method of manufacturing a thin film transistor for a liquid crystal display, the method comprising:
 forming a gate line on an insulating substrate in a predetermined direction;   forming a data line to cross the gate line;   forming a thin film transistor to be connected to the gate line and the data line;   forming a passivation layer on the thin film transistor;   forming a black matrix on the passivation layer to overlap at least a portion of the gate line, the data line, and the thin film transistor;   forming a color filter in a region partitioned by the black matrix; and   forming a pixel electrode on the color filter to be electrically connected to the thin film transistor.   
   
   
       17 . The method of  claim 16 , wherein the color filter is formed using an inkjet process. 
   
   
       18 . The method of  claim 17 , wherein the black matrix is formed of an organic material that is non-hygroscopic with respect to the color filter. 
   
   
       19 . The method of  claim 16 , further comprising forming a contact hole perforating the black matrix so as to electrically connect the thin film transistor and the pixel electrode. 
   
   
       20 . The method of  claim 19 , wherein the forming of the thin film transistor comprises:
 forming a gate electrode connected to the gate line;   forming a source electrode that is connected to the data line and overlaps a portion of the gate electrode; and   forming a drain electrode that overlaps a portion of the gate electrode and is opposed to the source electrode over the gate electrode,   wherein the contact hole is formed so as to electrically connect the drain electrode and the pixel electrode by perforating a portion of the black matrix.   
   
   
       21 . The method of  claim 20 , wherein the forming of the contact hole comprises:
 forming a photoresist layer to cover the black matrix and the color filter;   forming a via to perforate the black matrix of the region that overlaps the drain electrode using a dry etching process using the photoresist layer; and   removing the photoresist layer.   
   
   
       22 . The method of  claim 20 , wherein the forming of the contact hole comprises:
 forming an organic insulating layer to cover the black matrix and the color filter; and   forming a via to perforate a portion of the black matrix in the region that overlaps the drain electrode using a dry etching process using the organic insulating layer as a mask.   
   
   
       23 . The method of  claim 20 , wherein in the forming of the black matrix to overlap at least a portion of the gate line, the data line, and the thin film transistor, the portion of the black matrix in the region that overlaps the thin film transistor is formed using a slit mask so that the height of portion of the black matrix in which the contact hole is formed is smaller than that of the black matrix formed in the region that overlaps the gate line or the data line. 
   
   
       24 . The method of  claim 20 , wherein in the forming of the black matrix to overlap at least a portion of the gate line, the data line, and the thin film transistor, the portion of the black matrix in the region that overlaps the thin film transistor is formed using a slit mask in a region in which the contact hole is formed so that the black matrix is formed to have a step difference between a region in which the contact hole is formed and a region other than the region in which the contact hole is formed. 
   
   
       25 . The method of  claim 20 , wherein in the forming of the black matrix to overlap at least a portion of the gate line, the data line, and the thin film transistor, the portion of the black matrix in which the contact hole is formed has a hollow shape receive the contact hole.