US2010224351A1PendingUtilityA1

Heat exchanger

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Assignee: HITACHI CABLEPriority: Mar 5, 2009Filed: Mar 2, 2010Published: Sep 9, 2010
Est. expiryMar 5, 2029(~2.6 yrs left)· nominal 20-yr term from priority
B23K 2101/34F28F 2275/04B23K 1/203F28F 1/126F28F 21/084B23K 2103/10F28F 21/085B23K 2103/12B23K 2103/18B23K 1/19B23K 2101/14B23K 1/0012F28D 1/05366
34
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Claims

Abstract

A heat exchanger is provide, in which a fin member and a tube member are joined each other, wherein the fin member includes a solder wetting film layer containing copper, in at least a part of a surface of a fin substrate made of aluminum or an alloy mainly composed of aluminum, where the fin member and the tube member are joined each other, and the tube member includes a solder film layer made of solder containing tin, in at least a part of a surface of a tube substrate made of copper or an alloy mainly composed of copper, where the tube member and the fin member are joined each other, wherein the fin member and the tube member are joined each other, through a diffusion bonding of a copper component of the solder wetting film layer and a tin component of the solder film layer.

Claims

exact text as granted — not AI-modified
1 . A heat exchanger having a structure in which a fin member and a tube member are joined each other,
 wherein the fin member includes a solder wetting film layer containing copper, in at least a part of a surface of a fin substrate made of aluminum or an alloy mainly composed of aluminum where the fin member and the tube member are joined each other, and   the tube member includes a solder film layer made of solder containing tin, in at least a part of a surface of a tube substrate made of copper or an alloy mainly composed of copper where the tube member and the fin member are joined each other,   wherein the fin member and the tube member are joined each other, through a diffusion bonding of a copper component of the solder wetting film layer and a tin component of the solder film layer.   
     
     
         2 . A heat exchanger having a structure in which a fin member and a tube member are joined each other, wherein
 the fin member includes a solder wetting film layer containing copper in at least a part of a surface of a fin substrate made of aluminum or an alloy mainly composed of aluminum where the fin member and the tube member are joined each other, and includes a solder film layer made of solder containing tin on the surface of the solder wetting film layer, and   the tube member is made of copper or an alloy mainly composed of copper,   wherein the fin member and the tube member are joined each other, through a diffusion bonding of a copper component of the tube member and a tin component of the solder film layer.   
     
     
         3 . The heat exchanger according to  claim 1 , wherein the solder wetting film layer is formed as a two-layer lamination structure of a underlayer made of niobium or chromium, and a surface layer made of an alloy mainly composed of copper and added with at least one kind of metal of nickel and zinc. 
     
     
         4 . The heat exchanger according to  claim 2 , wherein the solder wetting film layer is formed as a two-layer lamination structure of a underlayer made of niobium or chromium, and a surface layer made of an alloy mainly composed of copper and added with at least one kind of metal of nickel and zinc. 
     
     
         5 . The heat exchanger according to  claim 1 , wherein a thickness of the solder wetting film layer is 5 nm or more and 400 nm or less, and a thickness of the solder film layer is 3 μm or more and 100 μm or less. 
     
     
         6 . The heat exchanger according to  claim 2 , wherein a thickness of the solder wetting layer is 5 nm or more and 400 nm or less, and a thickness of the solder film layer is 3 μm or more and 100 μm or less. 
     
     
         7 . The heat exchanger according to  claim 3 , wherein a thickness of the solder wetting film layer is 5 nm or more and 400 nm or less, and a thickness of the solder film layer is 3 μm or more and 100 μm or less. 
     
     
         8 . The heat exchanger according to  claim 4 , wherein a thickness of the solder wetting film layer is 5 nm or more and 400 nm or less, and a thickness of the solder film layer is 3 μm or more and 100 μm or less. 
     
     
         9 . The heat exchanger according to  claim 1 , wherein the solder film layer is made of pure tin. 
     
     
         10 . The heat exchanger according to  claim 2 , wherein the solder film layer is made of pure tin. 
     
     
         11 . The heat exchanger according to  claim 3 , wherein the solder film layer is made of pure tin. 
     
     
         12 . The heat exchanger according to  claim 4 , wherein the solder film layer is made of pure tin. 
     
     
         13 . The heat exchanger according to  claim 3 , wherein the solder film layer is made of pure tin, having a thickness of 3 μm or more and 30 μm or less. 
     
     
         14 . The heat exchanger according to  claim 4 , wherein the solder film layer is made of pure tin, having a thickness of 3 μm or more and 30 μm or less. 
     
     
         15 . The heat exchanger according to  claim 3 , wherein the underlayer of the solder wetting film layer is made of niobium, and the solder film layer is formed on the surface of the solder wetting film layer not subjected to cathodic degrease, by electroplating. 
     
     
         16 . The heat exchanger according to  claim 4 , wherein the underlayer of the solder wetting film layer is made of niobium, and the solder film layer is formed on the surface of the solder wetting film layer not subjected to cathodic degrease, by electroplating. 
     
     
         17 . The heat exchanger according to  claim 3 , wherein the underlayer of the solder wetting film layer is a sputter film made of niobium or chromium, with the underlayer having an internal residual stress of a compression stress or a zero stress, and the surface layer of the solder wetting film layer is the sputter film. 
     
     
         18 . The heat exchanger according to  claim 4 , wherein the underlayer of the solder wetting film layer is a sputter film made of niobium or chromium, with the underlayer having an internal residual stress of a compression stress or a zero stress, and the surface layer of the solder wetting film layer is a sputter film.

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